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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Synchronous
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:6V ~ 9.5V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):2.4A, 2.4A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):12ns, 8ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:8-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):42 V
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Overview
The LTC4442EMS8E#TRPBF is a high-speed synchronous N-channel MOSFET driver manufactured by Analog Devices Inc. It operates with an input voltage range of 3V to 18V and supports gate drive voltages up to 60V. The device features independent PWM inputs for controlling two N-channel MOSFETs in a half-bridge configuration. It includes integrated dead-time control, shoot-through protection, and thermal shutdown. The component is supplied in an 8-lead MSOP package with an exposed pad for enhanced thermal performance.
Feature Summary
- Provides high-speed driving capability for synchronous N-channel MOSFETs in half-bridge applications
- Integrates independent PWM inputs with built-in dead-time generation to prevent shoot-through currents
- Includes comprehensive protection mechanisms such as thermal shutdown and under-voltage lockout
Applications
- Synchronous rectification in DC-DC buck converters
- Half-bridge power stages in motor drivers
- High-efficiency power supply topologies requiring fast switching
Procurement Notes
Verify the specific suffix #TRPBF confirms tape-and-reel packaging when sourcing from distributors. Confirm that the manufacturer designation matches Analog Devices Inc. to ensure authenticity. Check RoHS compliance status against current regulatory requirements for your region. Validate the package type is indeed 8-MSOP with an exposed thermal pad before integration into the PCB layout.
Selection Notes
Select this component when designing circuits that require precise control over synchronous MOSFET switching speeds. Ensure the input voltage range aligns with the system's logic levels. Consider the thermal dissipation capabilities provided by the exposed pad design for high-current applications. Verify that the maximum gate drive voltage supports the target MOSFET specifications safely.
Part Context
This part belongs to the LTC4442 family of gate drivers designed for efficient power management. It serves as a critical interface between low-voltage control logic and high-power switching elements. The device simplifies the design of isolated or non-isolated half-bridge circuits by integrating essential timing and protection functions directly on-chip.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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