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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:4.5V ~ 13.5V
- Logic Voltage - VIL, VIH:1.85V, 3.25V
- Current - Peak Output (Source, Sink):2.5A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):8ns, 5ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:8-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):114 V
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Overview
The LTC4444EMS8E-5#TRPBF is a high-voltage synchronous N-channel MOSFET gate driver manufactured by Analog Devices Inc. It integrates two drivers in an MSOP-8 package, supporting input voltages up to 100 V and operating supply voltages from 7.2 V to 13.5 V. The device delivers 3 A output current with rise and fall times of 80 ns and 50 ns respectively. It features CMOS logic inputs, operates between -40°C and +125°C, and consumes 350 µA quiescent current.
Feature Summary
- Integrates high-side and low-side drivers for synchronous rectification
- Supports high-voltage inputs up to 100 V
- Provides independent three-state PWM input logic
- Operates with standard CMOS logic levels
Applications
- Synchronous rectifier control in DC-DC converters
- High-voltage half-bridge configurations
- Motor drive systems requiring isolated gate control
Procurement Notes
Verify the specific suffix #TRPBF indicates tape-and-reel packaging when sourcing. Confirm the E-grade temperature range matches application requirements. Check availability status as distribution may vary. Ensure the MSOP-8 footprint aligns with PCB design constraints before procurement.
Selection Notes
Select this component for applications requiring high-voltage isolation and synchronous rectification. Compare against the IMS8 variant if industrial temperature ratings are sufficient. Verify that the 100 V input rating exceeds the maximum bus voltage. Consider the 3 A peak drive current capability relative to the target MOSFET gate charge requirements.
Part Context
This part belongs to the LTC4444 series of high-voltage MOSFET drivers. It is designed for efficient power conversion where traditional diodes cause significant losses. The device simplifies design by integrating bootstrap and level-shifting functions typically required in high-side driving applications.
Replacement Considerations
LTC4444IMS8E-5#PBF is a tube-packaged equivalent with identical electrical specifications.
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