LTC4444IMS8E#PBF

LTC4444IMS8E#PBF

$5.83
  • Description:IC GATE DRVR HALF-BRIDGE 8MSOP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tube

SKU:9e0722fbc718 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8MSOP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:7.2V ~ 13.5V
  • Logic Voltage - VIL, VIH:1.85V, 3.25V
  • Current - Peak Output (Source, Sink):2.5A, 3A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):8ns, 5ns
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package:8-MSOP-EP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):114 V

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LTC4444IMS8E#PBF

Overview

The LTC4444IMS8E#PBF is a high-voltage synchronous N-channel MOSFET driver manufactured by Analog Devices. It integrates two independent drivers for high-side and low-side control within an MSOP-8 package. The device supports input voltages up to 100 V and operates on a supply voltage range of 7.2 V to 13.5 V. Key electrical parameters include a maximum output current of 3 A, propagation delay of 60 ns, rise time of 80 ns, and fall time of 50 ns. It functions with CMOS logic inputs and maintains operation across a temperature range of -40°C to +125°C.

Feature Summary

  • Integrates dual high-side and low-side gate drivers for synchronous rectification applications
  • Supports high-voltage inputs up to 100 V for driving external N-channel MOSFETs
  • Features fast switching characteristics with defined rise and fall times for efficient power management

Applications

  • High-voltage synchronous buck converters
  • Power management integrated circuits (PMIC)
  • Industrial motor control systems

Procurement Notes

Verify the specific suffix E in the part number against official Analog Devices documentation to confirm pinout or functional variations. Confirm RoHS compliance status through the manufacturer's datasheet. Ensure the MSOP-E-8 package dimensions match your PCB footprint requirements before procurement.

Selection Notes

Select this component when designing circuits requiring high-voltage isolation between control logic and power stages. The dual-driver architecture simplifies layout for half-bridge configurations. Consider the 3 A peak drive current capability relative to the total gate charge of the target MOSFETs to ensure adequate switching speed.

Part Context

This component belongs to the LTC4444 series of high-voltage MOSFET drivers. It is designed to replace discrete bootstrap and level-shifting solutions in compact power designs. The MSOP-E-8 package provides a small form factor suitable for space-constrained industrial and consumer electronics applications.

Replacement Considerations

LTC4444EMS8E-5#PBF is a documented variant within the same family.

LTC4444IMS8E#PBFLTC4444IMS8E#PBF
$5.83
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