— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:7.2V ~ 13.5V
- Logic Voltage - VIL, VIH:1.85V, 3.25V
- Current - Peak Output (Source, Sink):2.5A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):8ns, 5ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:8-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):114 V
Download product information
Overview
The LTC4444IMS8E#PBF is a high-voltage synchronous N-channel MOSFET driver manufactured by Analog Devices. It integrates two independent drivers for high-side and low-side control within an MSOP-8 package. The device supports input voltages up to 100 V and operates on a supply voltage range of 7.2 V to 13.5 V. Key electrical parameters include a maximum output current of 3 A, propagation delay of 60 ns, rise time of 80 ns, and fall time of 50 ns. It functions with CMOS logic inputs and maintains operation across a temperature range of -40°C to +125°C.
Feature Summary
- Integrates dual high-side and low-side gate drivers for synchronous rectification applications
- Supports high-voltage inputs up to 100 V for driving external N-channel MOSFETs
- Features fast switching characteristics with defined rise and fall times for efficient power management
Applications
- High-voltage synchronous buck converters
- Power management integrated circuits (PMIC)
- Industrial motor control systems
Procurement Notes
Verify the specific suffix E in the part number against official Analog Devices documentation to confirm pinout or functional variations. Confirm RoHS compliance status through the manufacturer's datasheet. Ensure the MSOP-E-8 package dimensions match your PCB footprint requirements before procurement.
Selection Notes
Select this component when designing circuits requiring high-voltage isolation between control logic and power stages. The dual-driver architecture simplifies layout for half-bridge configurations. Consider the 3 A peak drive current capability relative to the total gate charge of the target MOSFETs to ensure adequate switching speed.
Part Context
This component belongs to the LTC4444 series of high-voltage MOSFET drivers. It is designed to replace discrete bootstrap and level-shifting solutions in compact power designs. The MSOP-E-8 package provides a small form factor suitable for space-constrained industrial and consumer electronics applications.
Replacement Considerations
LTC4444EMS8E-5#PBF is a documented variant within the same family.
ChipApex | Global Electronic Components Supplier







