LTC4446EMS8E#PBF

LTC4446EMS8E#PBF

$5.58
  • Description:IC GATE DRVR HALF-BRIDGE 8MSOP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tube

SKU:cbaaa9022972 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8MSOP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Independent
  • Number of Drivers:2
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:7.2V ~ 13.5V
  • Logic Voltage - VIL, VIH:1.85V, 3.25V
  • Current - Peak Output (Source, Sink):2.5A, 3A
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):8ns, 5ns
  • Operating Temperature:-40°C ~ 85°C
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package:8-MSOP-EP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):114 V

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LTC4446EMS8E#PBF

Overview

The LTC4446EMS8E#PBF is a high-frequency, high-voltage gate driver designed to drive two N-channel MOSFETs in DC/DC converter applications. It supports supply voltages up to 100V and features a maximum high-side bootstrap voltage of 114V. The device operates with non-inverting inputs and provides typical rise and fall times of 8ns and 5ns respectively. It delivers a peak output current of 3A with output resistances of 1.2Ω and 0.55Ω. Operating temperatures range from -40°C to 85°C, and it is housed in an 8-MSOP package with an exposed pad.

Feature Summary

  • High-voltage capability supporting supply voltages up to 100V for robust DC/DC converter operation
  • Fast switching performance with typical rise and fall times of 8ns and 5ns
  • Dual-channel configuration optimized for driving N-channel MOSFETs in half-bridge topologies

Applications

  • High-frequency DC/DC converters
  • Half-bridge power stages
  • N-channel MOSFET gate driving circuits

Procurement Notes

Verify availability status as the component may be subject to limited supply or special order requirements. Confirm the specific suffix #PBF indicates lead-free compliance and RoHS adherence. Ensure the 8-MSOP package with exposed pad matches the PCB footprint design. Check for any obsolescence notices or recommended alternative parts from Analog Devices before finalizing procurement plans.

Selection Notes

Select this driver for applications requiring high-voltage isolation and fast switching speeds. The 114V bootstrap rating accommodates high-side N-channel configurations without external level shifters. Consider the 3A peak current capability for driving moderate gate charges efficiently. The non-inverting input simplifies control logic integration compared to complementary input drivers.

Part Context

This part belongs to the LTC4446 series of high-voltage gate drivers from Analog Devices. It is specifically engineered for power management ICs where high-side N-channel MOSFETs are preferred for efficiency. The MSOP-8 package offers a compact solution for space-constrained designs while maintaining thermal performance through the exposed pad.

Replacement Considerations

Check Analog Devices documentation for direct pin-compatible replacements within the LTC44xx family. Verify if lower voltage variants like LTC4440 meet the 100V requirement. Ensure substitute parts support the same 8-MSOP package and non-inverting input configuration.

LTC4446EMS8E#PBFLTC4446EMS8E#PBF
$5.58
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