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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR)
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:7.2V ~ 13.5V
- Logic Voltage - VIL, VIH:1.85V, 3.25V
- Current - Peak Output (Source, Sink):2.5A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):8ns, 5ns
- Operating Temperature:-40°C ~ 85°C
- Mounting Type:Surface Mount
- Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:8-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):114 V
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Overview
The LTC4446EMS8E#TRPBF is a high-frequency, high-voltage gate driver designed to control two N-channel MOSFETs in DC/DC converter applications. It supports supply voltages up to 100V and features independent high-side and low-side outputs. The device operates with input logic levels compatible with standard digital interfaces and provides peak output drive currents of 2.5A source and 3A sink. Packaged in an 8-pin MSOP with exposed pad for thermal performance, it ensures reliable switching in power management systems.
Feature Summary
- Supports high voltage operation with supply capabilities up to 100V
- Provides independent high-side and low-side drive channels for dual MOSFET control
- Features high peak output current capability for fast switching transitions
Applications
- High voltage DC/DC converters
- Isolated gate driving circuits
- Power supply modules requiring robust MOSFET control
Procurement Notes
Verify the exact part number suffix against official Analog Devices documentation to confirm package type and tape/reel specifications. Ensure compatibility with your PCB footprint, particularly the exposed pad thermal design. Confirm RoHS compliance status through the manufacturer's latest declaration before procurement.
Selection Notes
Select this component when designing circuits requiring simultaneous control of high-side and low-side N-channel MOSFETs under high voltage conditions. Consider the 100V supply limit and peak drive currents relative to your MOSFET gate charge requirements. Evaluate thermal dissipation needs given the MSOP-EP package constraints.
Part Context
This component belongs to the LTC4446 family of high-voltage gate drivers from Analog Devices. It is engineered for applications demanding precise timing and robust drive strength in electrically noisy environments. The series is commonly utilized in industrial power conversion and automotive electronics where reliability under high stress is critical.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided data.
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