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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 16MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:High-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:3.5V ~ 135V
- Logic Voltage - VIL, VIH:1.8V, 1.7V
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):90ns, 40ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:16-TFSOP (0.118", 3.00mm Width), 12 Leads, Exposed Pad
- Supplier Device Package:16-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):135 V
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Overview
The LTC7000EMSE-1#TRPBF is a high-side N-channel MOSFET gate driver manufactured by Analog Devices Inc. It operates within a supply voltage range of 3.5 V to 135 V and features a non-inverting input configuration. The device utilizes a 16-MSOP-EP package with an exposed pad for thermal management. Key electrical parameters include a typical rise time of 90 ns and a fall time of 40 ns. It supports logic levels of 1.8 V (VIL) and 1.7 V (VIH). The component is rated for operation between -40°C and +125°C junction temperature.
Feature Summary
- Provides fast switching performance for high-side N-channel MOSFETs with dedicated rise and fall times.
- Supports bootstrap operation for high-voltage applications up to 135 V.
- Features a non-inverting logic interface compatible with standard CMOS logic levels.
Applications
- High-side static switch driving
- Power management systems requiring high-side control
- Industrial motor control interfaces
Procurement Notes
Verify the specific suffix #TRPBF indicates tape and reel packaging when sourcing. Confirm the -1 variant designation matches the required non-inverting configuration. Check current availability status as distribution may be limited. Ensure the 16-MSOP-EP footprint aligns with the PCB layout requirements. Validate RoHS compliance documentation for the specific manufacturing batch.
Selection Notes
Select this component for applications requiring high-side drive capabilities with voltages up to 135 V. The non-inverting configuration simplifies control logic integration. Consider the 16-MSOP-EP package for space-constrained designs requiring thermal dissipation through the exposed pad. Verify that the input logic thresholds meet the system's low-voltage control requirements.
Part Context
This part belongs to the LTC7000 family of high-side gate drivers designed for N-channel MOSFETs. It shares functional similarities with other variants in the series, distinguished primarily by packaging and specific electrical tolerances. The device addresses the need for reliable high-side switching in power electronics where bootstrap drive is necessary.
Replacement Considerations
LTC7000EMSE-1#PBF is a tube-packaged equivalent. LTC7000ARMSE-1#TRPBF offers a higher maximum voltage rating of 150 V. LTC7000IMSE-1#TRPBF provides an industrial temperature grade option.
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