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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 10MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tube
- Driven Configuration:High-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:3.5V ~ 15V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):90ns, 40ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:10-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):135 V
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Overview
The LTC7001EMSE#PBF is a high-side N-channel MOSFET gate driver manufactured by Analog Devices Inc. It operates with a supply voltage range of 3.5V to 15V and supports high-side voltages up to 135V, with an absolute maximum rating of 150V. The device features a 1Ω pull-down and 2.2Ω pull-up output stage, enabling fast switching times of 90ns rise and 40ns fall times with a 35ns propagation delay. It utilizes an internal charge pump for 100% duty cycle capability and accepts CMOS-compatible inputs. Packaged in a 10-lead MSOP with exposed pad, it is rated for junction temperatures from -40°C to 125°C.
Feature Summary
- Internal charge pump enables full on-state capability for external N-channel MOSFETs
- Low impedance output stage facilitates rapid switching of large gate capacitances
- Adjustable turn-on slew rate and overvoltage lockout thresholds
- CMOS-compatible logic interface for direct digital control
Applications
- High-frequency power switching circuits
- Static switch applications requiring indefinite on-states
- Industrial motor drive systems
- Automotive power management modules
Procurement Notes
Verify the specific suffix EMSE against the manufacturer's current datasheet to confirm package dimensions and thermal characteristics. Ensure the operating temperature grade matches the application requirements, as variants exist for extended industrial and automotive ranges. Confirm RoHS compliance status through official documentation before finalizing procurement specifications.
Selection Notes
Select this component when driving high-side N-channel MOSFETs with source potentials reaching 135V. The internal charge pump eliminates the need for external bootstrap capacitors, simplifying circuit design. Consider the adjustable UVLO and OVP features if system protection against transient voltage spikes or low supply conditions is required for reliable operation.
Part Context
This part belongs to the LTC7001 series of high-side gate drivers designed for robust performance in demanding power electronics environments. It shares functional similarities with the protected variant LTC7000 but lacks integrated fault protection features. The MSOP-10 package provides necessary creepage distances for high-voltage isolation while maintaining a compact footprint suitable for dense PCB layouts.
Replacement Considerations
LTC7001JMSE#PBF: Identical function with different temperature grade (up to 150°C). LTC7000EMSE#PBF: Similar driver with added short-circuit protection.
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