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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 10MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tube
- Driven Configuration:High-Side
- Channel Type:Single
- Number of Drivers:1
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:3.5V ~ 15V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):-
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):90ns, 40ns
- Operating Temperature:-40°C ~ 125°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:10-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):135 V
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Overview
The LTC7001IMSE#PBF is a high-speed, high-side N-channel MOSFET gate driver manufactured by Analog Devices Inc. It operates with a supply voltage range of 3.5V to 15V and supports drain voltages up to 135V, with an absolute maximum rating of 150V. The device features a 1Ω pull-down and 2.2Ω pull-up output stage, enabling fast switching with a typical propagation delay of 35ns and rise/fall times of 13ns for a 1000pF load. It includes an internal charge pump for 100% duty cycle capability, adjustable turn-on slew rate, and programmable under-voltage lockout (UVLO) and over-voltage lockout (OVL). Packaged in a 10-lead MSOP with exposed pad.
Feature Summary
- Internal charge pump enables full enhancement of external N-channel MOSFETs for indefinite on-state operation.
- Low impedance output stage provides rapid switching transitions to minimize power loss during high-frequency operation.
- Programmable protection thresholds allow customization of turn-on slew rates and over-voltage lockout levels.
Applications
- High-frequency switching power supplies
- Static switch applications requiring high-side control
- Motor drive systems utilizing N-channel MOSFETs
Procurement Notes
Verify the specific suffix #PBF indicates lead-free compliance when sourcing. Confirm the package variant matches the required thermal performance and pinout compatibility for your PCB layout. Cross-reference the manufacturer's latest datasheet revision to ensure all electrical characteristics and mechanical dimensions align with current production standards before finalizing procurement.
Selection Notes
Select this component for designs requiring precise control of high-side N-channel MOSFETs with minimal propagation delay. The adjustable UVLO and OVL features provide flexibility for varying input voltage conditions. Ensure the external MOSFET gate capacitance is compatible with the driver's output current capabilities to maintain the specified switching speeds without excessive heat generation.
Part Context
This part belongs to the LTC7000/LTC7001 family of high-side gate drivers designed for robust performance in demanding power electronics environments. It shares functional similarities with other high-voltage drivers but distinguishes itself through its specific combination of speed, integrated charge pump efficiency, and adjustable protection parameters within a compact surface-mount package.
Replacement Considerations
LTC7001IMSE-1#PBF
FAQ
What is the maximum drain voltage supported by the LTC7001?
The device supports drain voltages up to 135V, with an absolute maximum rating of 150V.
Does the LTC7001 support 100% duty cycle operation?
Yes, the internal charge pump fully enhances the external N-channel MOSFET, allowing it to remain on indefinitely.
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