LTC7001MPMSE

LTC7001MPMSE

  • Description:IC GATE DRVR HIGH-SIDE 10MSOP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tube

SKU:3b21ed313325 Category: Brand:

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Product Detailed Parameters

  • Description:IC GATE DRVR HIGH-SIDE 10MSOP
  • Series:-
  • Mfr:Analog Devices Inc.
  • Package:Tube
  • Driven Configuration:High-Side
  • Channel Type:Single
  • Number of Drivers:1
  • Gate Type:MOSFET (N-Channel)
  • Voltage - Supply:3.5V ~ 15V
  • Logic Voltage - VIL, VIH:1.8V, 1.7V
  • Current - Peak Output (Source, Sink):-
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):90ns, 40ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package:10-MSOP-EP
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):135 V

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LTC7001MPMSE

Overview

The LTC7001MPMSE#PBF is a high-speed, high-side N-channel MOSFET gate driver manufactured by Analog Devices. It operates with a supply voltage range of 3.5V to 15V and supports high-side voltages up to 135V (150V absolute maximum). The device features a 1Ω pull-down and 2.2Ω pull-up output stage, enabling fast switching with typical rise and fall times of 13ns. It includes an internal charge pump for 100% duty cycle capability, adjustable turn-on slew rate, and programmable undervoltage lockout thresholds. Packaged in a 10-lead MSOP with exposed pad, it is rated for junction temperatures from -55°C to +150°C.

Feature Summary

  • Internal charge pump enables full enhancement of external N-channel MOSFETs for indefinite on-state operation
  • Low impedance output stage provides rapid switching transitions to minimize power loss
  • Adjustable turn-on slew rate allows optimization of electromagnetic interference and switching noise
  • Programmable overvoltage and undervoltage lockout thresholds protect against abnormal operating conditions

Applications

  • High-frequency power conversion circuits requiring precise timing control
  • Static switching applications utilizing large gate capacitance MOSFETs
  • Industrial motor drive systems demanding robust high-side protection
  • Automotive power management modules operating under extreme thermal conditions

Procurement Notes

Verify the complete part number suffix, specifically #PBF, to confirm lead-free compliance and RoHS status. Confirm the military grade temperature rating (-55°C to +150°C) matches the specific application requirements. Ensure the MSOP-10 package footprint aligns with the PCB layout design. Check for any recent product change notices regarding epoxy or marking changes that may affect assembly processes.

Selection Notes

Select this component when driving high-side N-channel MOSFETs at voltages exceeding standard bootstrap limits. The internal charge pump eliminates the need for external bootstrapping diodes or capacitors in many configurations. Consider the adjustable slew rate feature if EMI reduction is critical. Verify that the input logic levels are compatible with the controlling microcontroller or FPGA signals.

Part Context

This device belongs to the LTC7000/LTC7001 family of high-voltage gate drivers designed for demanding power electronics applications. The MP suffix indicates a military-grade temperature range variant, offering enhanced reliability compared to industrial or commercial versions. It shares functional similarities with the LTC7004 but supports significantly higher bus voltages.

Replacement Considerations

LTC7001EMSE#PBF: Industrial grade version with -40°C to +125°C operating range. LTC7001HMS8E#PBF: Automotive grade version with -40°C to +150°C operating range. LTC7004MPMSE#PBF: Similar functionality but limited to 60V high-side voltage.

LTC7001MPMSELTC7001MPMSE

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