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Product Detailed Parameters
- Description:IC GATE DRVR HIGH-SIDE 12MSOP
- Series:-
- Mfr:Analog Devices Inc.
- Package:Tape & Reel (TR),Cut Tape (CT)
- Driven Configuration:High-Side
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:5V ~ 14V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):3A, 3A
- Input Type:Non-Inverting
- Rise / Fall Time (Typ):18ns, 14ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:12-TSSOP (0.118", 3.00mm Width) Exposed Pad
- Supplier Device Package:12-MSOP-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):15 V
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Overview
The LTC7067RMSE#TRPBF is a dual high-side MOSFET gate driver manufactured by Analog Devices Inc. It operates with a supply voltage range of 4.5V to 150V and supports input signals from 1.2V to 15V. The device features adjustable dead-time control, adaptive shoot-through protection, and floating ground capability for high-side switching applications. It is housed in an MSOP-10 package and is rated for operation between -40°C and +125°C.
Feature Summary
- Dual high-side MOSFET gate driver architecture
- Adjustable dead-time control mechanism
- Adaptive shoot-through protection circuitry
Applications
- High-side power switching circuits
- Motor drive systems
- Industrial power management modules
Procurement Notes
Verify the specific suffix TRPBF indicates tape and reel packaging configuration. Confirm the RMSE variant corresponds to the MSOP-10 package type. Ensure compatibility with the required 150V operating environment and input signal levels before integration into the design.
Selection Notes
Select this component when dual isolated high-side driving is required within a 150V system. Consider the adjustable dead-time feature for optimizing switching efficiency and minimizing cross-conduction risks in synchronous rectification or bridge topologies.
Part Context
This part belongs to the LTC7067 series of high-voltage gate drivers designed for robust performance in demanding power electronics environments. It provides integrated protection features essential for reliable high-side MOSFET operation.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
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