LXS101-23-4/TR

RF Diode Overview

The LXS101-23-4/TR is a radio frequency Schottky diode manufactured by Microchip Technology, housed in an SOT-23-3 surface-mount package. It features a dual common-cathode configuration with a maximum peak reverse voltage of 100V and a continuous forward current rating of 1A. The device supports a power dissipation of 250mW and operates within a temperature range of -55°C to +125°C. Key electrical characteristics include a capacitance of 2pF at 0V reverse bias measured at 1MHz and a resistance of 4 ohms at 100mA forward current and 100MHz. The component is RoHS compliant and classified under EAR99 export controls.

RF Diode Feature Summary

• Dual common-cathode RF Schottky diode structure for efficient signal processing
• High surge current handling capability suitable for demanding RF environments
• Low junction capacitance ensuring minimal signal distortion at high frequencies

RF Diode Applications

• RF switching circuits requiring fast recovery times
• Detector applications in communication systems
• Mixers in radio frequency front-end modules

RF Diode Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm tape-and-reel packaging specifications. Ensure that the ordering part number matches the exact voltage and current ratings required for the target application. Cross-reference the manufacturer's latest datasheet to confirm compliance with current environmental standards and any recent product change notices affecting availability or specifications.

RF Diode Selection Notes

Select this component when a low-capacitance Schottky barrier is required for high-frequency signal integrity. The SOT-23-3 package is appropriate for space-constrained designs. Evaluate the thermal management requirements based on the 250mW power dissipation limit. Confirm that the 100V reverse voltage rating exceeds the peak inverse voltage present in the circuit during operation.

RF Diode Part Context

This device belongs to the LXS series of RF Schottky diodes from Microchip Technology. The series provides various voltage ratings and configurations tailored for radio frequency applications. The LXS101 variant specifically offers a 100V breakdown voltage, distinguishing it from lower-voltage counterparts within the same family while maintaining the compact form factor and performance characteristics typical of the series.

RF Diode Replacement Considerations

Consult Microchip's official cross-reference tools for verified equivalent parts. Ensure any substitute maintains the SOT-23-3 footprint, 100V reverse voltage, and 1A forward current ratings. Verify that alternative components meet the same capacitance and resistance specifications to prevent performance degradation in sensitive RF circuits.