M29F400FT55N3E2

Memory IC Overview

The M29F400FT55N3E2 is a 4 Megabit (512K x 8 or 256K x 16) parallel NOR flash memory device manufactured by Micron Technology Inc. It operates on a single 5V supply with an access time of 55ns and supports asynchronous read/write operations. The device features top boot block architecture, offering independent block erase capabilities and hardware write protection. It is housed in a 48-pin TSOP package and certified for automotive applications under AEC-Q100 standards.

Memory IC Feature Summary

• Supports embedded byte/word programming algorithms managed by an on-chip program/erase controller
• Features erase suspend and resume modes to allow code execution during erase cycles
• Provides hardware write protection for individual blocks to prevent accidental modification
• Complies with JEDEC standards for command interface and Common Flash Interface (CFI)

Memory IC Applications

• Storing initialization code for microprocessors in small boot blocks
• Parameter storage in dedicated parameter blocks
• Application code storage in main memory blocks
• Automotive electronic control units requiring AEC-Q100 certification

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type, temperature range, and shipping options. Ensure compatibility with system voltage requirements and interface signals before integration. Check for end-of-life status or alternative recommendations from the supplier.

Memory IC Selection Notes

Select this component when a 4Mb capacity with top boot block configuration is required. It is suitable for designs needing 55ns access speed and 5V operation. Consider the 48-pin TSOP package dimensions and pinout compatibility with the target PCB layout. Verify that the automotive grade qualification meets the environmental constraints of the application.

Memory IC Part Context

This part belongs to the Micron M29F series of 5V Parallel NOR Flash Embedded Memory devices. The series includes densities ranging from 2Mb to 16Mb, available in both top and bottom boot block configurations. The M29F400 specifically offers 4Mb density with asymmetric block structures optimized for boot code and parameter storage.

Memory IC Replacement Considerations

Check for direct substitutes within the M29F400 family, such as the M29F400BB55N3E2 for bottom boot block configuration. Verify pin-to-pin compatibility and electrical specifications if considering alternatives from other manufacturers like STMicroelectronics or Alliance Memory.