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M29F800FB55N3E2 is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 8MBIT PARALLEL 48TSOP I. Review the specifications below when checking this part for your BOM.
Memory IC specifications for M29F800FB55N3E2
- Description：IC FLASH 8MBIT PARALLEL 48TSOP I
- Series：-
- Mfr：Micron Technology Inc.
- Package：Tray
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NOR
- Memory Size：8Mbit
- Memory Organization：1M x 8, 512K x 16
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：55ns
- Voltage - Supply：4.5V ~ 5.5V
- Operating Temperature：-40°C ~ 125°C (TA)
- Mounting Type：Surface Mount
- Package / Case：48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package：48-TSOP I
- Access Time：55 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for M29F800FB55N3E2
Memory IC Overview
The M29F800FB55N3E2 is an 8-Mbit (1 Meg x 8 or 512K x 16) parallel NOR flash memory device manufactured by Micron Technology. It operates on a single 4.5V to 5.5V supply and features a 55ns access time. The device utilizes a bottom boot block configuration with independent block erase capabilities and an integrated program/erase controller. It supports asynchronous read, program, and erase operations via standard command interfaces compliant with JEDEC standards.
Memory IC Feature Summary
- Integrated program/erase controller manages embedded byte/word programming algorithms
- Supports erase suspend and resume modes for flexible system operation
- Features low power consumption with standby and automatic standby modes
- Provides independent block protection to prevent accidental modification
Memory IC Applications
- Code storage for microprocessor initialization
- Parameter storage in embedded systems
- Application code execution in industrial environments
Memory IC Procurement Notes
Verify the specific ordering suffix against the manufacturer's current datasheet to confirm package type, temperature range, and shipping options. Ensure compatibility with the target system's voltage requirements and interface signals before integration.
Memory IC Selection Notes
Select this component for applications requiring asymmetric boot block structures at the bottom of the address space. It is suitable for designs needing independent block protection and reliable code execution from non-volatile memory with standard parallel interfaces.
Memory IC Part Context
This part belongs to the M29F series of 5V Parallel NOR Flash Embedded Memory devices. The 'B' designation indicates a bottom boot block architecture, while '55' specifies the 55ns speed grade. It is designed for automotive and industrial applications requiring high reliability and wide temperature operation.
Memory IC Replacement Considerations
Compatible substitutes within the same family include M29F800FT55N3E2 (top boot variant) and other densities like M29F400 or M29F160 with matching speed and package specifications.
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