Memory IC M29W128GSL70ZS6E product image

M29W128GSL70ZS6E

  • Description:IC FLASH 128MBIT PARALLEL 64FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:b5a804b973f9 Category: Brand:

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M29W128GSL70ZS6E is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 128MBIT PARALLEL 64FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for M29W128GSL70ZS6E

  • Description:IC FLASH 128MBIT PARALLEL 64FBGA
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:128Mbit
  • Memory Organization:16M x 8, 8M x 16
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:70ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:64-LBGA
  • Supplier Device Package:64-FBGA (11x13)
  • Access Time:70 ns

Memory IC datasheet and documents for M29W128GSL70ZS6E

M29W128GSL70ZS6E

Memory IC Overview

The M29W128GSL70ZS6E is a 128-Mbit (16 Mbit x 8 or 8 Mbit x 16) parallel NOR flash memory manufactured by Micron Technology Inc. It operates with a supply voltage of 2.7 V to 3.6 V for program, erase, and read operations, while I/O buffers support 1.65 V to 3.6 V. The device features a maximum access time of 70 ns and is housed in a 64-ball LBGA package measuring 11 mm x 13 mm with a 1 mm pitch. It supports uniform block architecture and includes command interfaces, data polling, and general flash interface capabilities.

Memory IC Feature Summary

  • Supports Execute-in-Place (XiP) code execution via byte-level random access
  • Configurable parallel interface supporting both x8 and x16 data bus widths
  • Uniform block architecture for flexible sector management
  • Integrated command user interface with data polling functionality

Memory IC Applications

  • Embedded systems requiring direct code execution from flash
  • Industrial control applications needing high reliability
  • Automotive electronic control units (ECUs)
  • Firmware storage for microprocessors and controllers

Memory IC Procurement Notes

Verify the exact suffix 'S6E' against official Micron documentation to confirm package type and temperature grade. Ensure compatibility with system voltage requirements, specifically the 1.65 V to 3.6 V I/O range. Confirm RoHS compliance status as indicated in product descriptions. Check current availability status as older variants may be obsolete.

Memory IC Selection Notes

Select this component when a 128-Mbit capacity with 70 ns access speed is required for parallel NOR applications. It is suitable for designs needing a 64-pin BGA footprint. Consider the specific voltage requirements for I/O buffers if interfacing with lower voltage logic. Verify that the uniform block structure aligns with the firmware partitioning strategy.

Memory IC Part Context

This part belongs to the Micron M29W128GL/GH series of 3V supply flash memories. These devices are designed for high-performance embedded applications where fast random access and code execution capability are critical. The series offers various package options including TSOP and BGA configurations to suit different board space constraints.

Memory IC Replacement Considerations

Direct substitutes include other M29W128GL variants with compatible pinouts and electrical characteristics, such as M29W128GL70ZA6E or M29W128GH70ZS6F, provided the package and temperature specifications match the design requirements.

M29W128GSL70ZS6EM29W128GSL70ZS6E

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