Memory IC M29W400DT55N6E product image

M29W400DT55N6E

  • Description:IC FLASH 4MBIT PARALLEL 48TSOP I
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray

SKU:2115d67e0657 Category: Brand:

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M29W400DT55N6E is listed in the Memory IC range at ChipApex. The manufacturer field lists Micron Technology Inc.. Its product description is IC FLASH 4MBIT PARALLEL 48TSOP I. Review the specifications below when checking this part for your BOM.

Memory IC specifications for M29W400DT55N6E

  • Description:IC FLASH 4MBIT PARALLEL 48TSOP I
  • Series:-
  • Mfr:Micron Technology Inc.
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:4Mbit
  • Memory Organization:512K x 8, 256K x 16
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package:48-TSOP I
  • Access Time:55 ns

Memory IC datasheet and documents for M29W400DT55N6E

M29W400DT55N6E

Memory IC Overview

The M29W400DT55N6E is a 4-Mbit (512 Kbit x 8 or 256 Kbit x 16) parallel NOR flash memory manufactured by Micron Technology Inc. It operates on a single 3 V supply voltage, with access times of 45 ns, 55 ns, and 70 ns available. The device features an embedded program/erase controller and supports top boot block configurations. It offers 100,000 program/erase cycles per block and includes low-power standby modes.

Memory IC Feature Summary

  • Embedded program and erase controllers for autonomous operation
  • Supports erase suspend and resume modes for read/write operations
  • Provides temporary block unprotection capabilities
  • Includes electronic signature identification codes

Memory IC Applications

  • Code storage in embedded systems requiring boot blocks
  • Data storage in industrial control applications
  • Firmware storage in consumer electronics devices

Memory IC Procurement Notes

Verify the specific suffix N6E against official Micron documentation to confirm package type and temperature range. Ensure compatibility with system voltage requirements of 2.7 V to 3.6 V. Check for end-of-life status as older packages may be discontinued. Confirm RoHS compliance if required for your manufacturing process.

Memory IC Selection Notes

Select this component when a 4-Mbit capacity with a dedicated top boot block is required. The 55 ns access speed suits moderate-performance parallel interfaces. Consider the TFBGA48 or TSOP48 package availability based on board space constraints. Verify that the 3 V supply aligns with the target system power architecture.

Memory IC Part Context

This part belongs to the M29W400 series of 3 V NOR flash memories. It shares architectural similarities with other variants like M29W400DT70N6 but differs in access speed and package options. The series is designed for applications needing reliable code execution and data retention in compact form factors.

Memory IC Replacement Considerations

Direct substitutes include M29W400DT45N6E for faster access or M29W400DT70N6E for slower timing. Cross-referencing with Numonyx equivalents may be necessary due to brand transitions. Verify pinout and command set compatibility before substitution.

M29W400DT55N6EM29W400DT55N6E

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