M45PE40-VMP6TG TR

Memory IC Overview

The M45PE40-VMP6TG TR is a 4-Mbit serial flash memory component manufactured by Micron Technology Inc. It features a 75 MHz SPI bus interface and operates on a single 2.7 V to 3.6 V supply voltage. The device utilizes the VFQFPN-8 (MLP8) package, measuring 6 x 5 mm. Memory organization consists of 2048 pages of 256 bytes each, or 8 sectors of 64 Kbytes. Key electrical parameters include a maximum clock frequency of 75 MHz and a typical deep power-down current of 1 µA.

Memory IC Feature Summary

• Supports page write operations that integrate erase and program cycles for efficient byte-alterability.
• Provides hardware write protection for the bottom sector via the Write Protect pin.
• Includes a unique ID code available upon customer request in specific process technologies.
• Features deep power-down mode for significant standby current reduction.

Memory IC Applications

• Embedded systems requiring non-volatile data storage with high-speed access
• Firmware storage for microcontrollers utilizing SPI interfaces
• Industrial control applications needing robust data retention

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the MLP8 package type and tape-and-reel delivery format. Confirm manufacturer origin as Micron or authorized licensee. Check for RoHS compliance status corresponding to ECOPACK specifications. Ensure the part number matches the exact capacity and speed grade required for the design.

Memory IC Selection Notes

Select this component when a compact 8-lead surface-mount package is required for 4-Mbit storage. Ensure the host controller supports SPI modes compatible with CPOL=0/CPHA=0 or CPOL=1/CPHA=1. Verify that the system voltage range aligns with the 2.7 V to 3.6 V operating specification. Consider the page size constraints for data modification strategies.

Memory IC Part Context

This part belongs to the M45PE40 series of page-erasable serial flash memories. It is designed for applications demanding byte-level alterability without full sector erasure overhead. The device integrates a 256-byte data buffer to facilitate efficient programming and writing operations across consecutive addresses within a single page boundary.

Memory IC Replacement Considerations

M45PE40-VMW6G

Memory IC FAQ

How does the Page Write instruction differ from Page Program?

Page Write automatically performs an internal erase cycle followed by programming, allowing bits to change from 0 to 1 or 1 to 0. Page Program only allows bits to change from 1 to 0 and requires the page to be previously erased.

What is the function of the Write Protect pin?

Driving the Write Protect pin Low places the first 256 pages of memory into a read-only state, protecting them from write, program, and erase operations.