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M5M5V108DFP-70H is listed in the Memory IC range at ChipApex. The manufacturer field lists Samsung Semiconductor, Inc.. Its product description is SRAM ASYNC SLOW 1 MB 128Kx8 3V 3. Review the specifications below when checking this part for your BOM.
Memory IC specifications for M5M5V108DFP-70H
- Description：SRAM ASYNC SLOW 1 MB 128Kx8 3V 3
- Series：-
- Mfr：Samsung Semiconductor, Inc.
- Package：Tube
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：1Mbit
- Memory Organization：128K x 8
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：70ns
- Voltage - Supply：3V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：-
- Supplier Device Package：32-SOP
- Access Time：-
- Grade：-
- Qualification：-
Memory IC datasheet and documents for M5M5V108DFP-70H
Memory IC Overview
The M5M5V108DFP-70H is a CMOS Static RAM manufactured by Mitsubishi Electric, not Samsung Semiconductor. It features a density of 1 Megabit (131,072 words by 8 bits) with an access time of 70 nanoseconds. The component utilizes a standard asynchronous operation mode and common I/O interface. It is housed in a 32-pin Plastic Dual In-line Package (PDIP). The device operates within a temperature range extending up to 70°C.
Memory IC Feature Summary
- CMOS technology for static random access memory
- Asynchronous operation mode
- Common input/output interface
Memory IC Applications
- General-purpose data storage
- Embedded systems requiring fast local memory
- Industrial control applications
Memory IC Procurement Notes
Verify the manufacturer origin carefully, as this specific part number belongs to Mitsubishi Electric rather than Samsung Semiconductor. Confirm the package type is PDIP-32 and check for lead compliance status, as older variants may be non-RoHS. Ensure the 70ns speed grade matches system timing requirements before procurement.
Memory IC Selection Notes
Select this component when a 1Mb capacity and 70ns access speed are required in a through-hole DIP format. Consider alternative packages like TSOP or BGA if board space is limited. Verify thermal constraints against the 70°C maximum operating temperature limit specified for this industrial-grade variant.
Memory IC Part Context
This component is part of the M5M5V108 series of 1-Mbit CMOS SRAMs produced by Mitsubishi Electric. These devices are designed for high-speed data processing tasks where volatile memory retention is necessary during active power cycles. The series supports various access times and package configurations to suit different embedded design needs.
Memory IC Replacement Considerations
Compatible substitutes include other 1Mb x 8 SRAMs with 70ns access times in a 32-pin DIP package from manufacturers such as ISSI or Winbond. Ensure pin compatibility and voltage levels match the original design specifications.
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