M68AW512ML70ND6

Memory IC Overview

The M68AW512ML70ND6 is an 8 Mbit (512K x 16 bits) CMOS asynchronous static random-access memory. It operates on a single 2.7 to 3.6V supply and features fully static operation without external clocks. The device provides equal address access and cycle times of 70 ns. It supports single-byte read/write operations via upper and lower byte enable inputs. Automatic power-down reduces standby current significantly when deselected.

Memory IC Feature Summary

• Supports single-byte read and write operations through independent upper and lower byte enable controls.
• Features automatic power-down functionality that activates standby mode upon deselection, reducing power consumption by over 99%.
• Utilizes tri-state common I/O with output enable control for high-speed data transfer.
• Maintains data retention at low VCC levels down to 1.5V.

Memory IC Applications

• Embedded systems requiring fast asynchronous memory access
• Industrial control applications needing reliable static RAM
• Consumer electronics utilizing 3.0V logic interfaces

Memory IC Procurement Notes

Verify the specific speed grade and temperature range required for your application against the datasheet specifications. Confirm package compatibility with TSOP44 Type II dimensions. Ensure voltage levels match the 2.7V to 3.6V operating range. Check for any lead-free soldering process requirements if applicable to your manufacturing standards.

Memory IC Selection Notes

Select this component for designs requiring 8 Mbit capacity with 16-bit word width. Choose based on the 70 ns access time requirement and 3.0V nominal supply voltage. Consider the TSOP44 Type II package for space-constrained PCB layouts. Evaluate power consumption needs, noting the low standby current characteristics during inactive periods.

Memory IC Part Context

This part belongs to the M68AW512M family of 8 Mbit asynchronous SRAMs from STMicroelectronics. It shares architectural similarities with other devices in the series but differs in speed grades and packaging options. The M68AW512ML70ND6 specifically denotes the 70 ns speed class in a TSOP44 Type II package.

Memory IC Replacement Considerations

Compatible substitutes include the M68AW512ML55ND6 for faster 55 ns performance within the same package. Other variants like M68AW512ML70ZB offer different package footprints. Verify electrical parameters and pinouts before substitution.

Memory IC FAQ

What is the data retention voltage for the M68AW512ML70ND6?

The device supports low VCC data retention down to 1.5V while maintaining stored data.

How does the automatic power-down feature work?

Power-down is invoked automatically whenever Chip Enable is de-asserted or both Upper and Lower Byte Enables are de-asserted, switching the device to standby mode.

Can individual bytes be written independently?

Yes, the device supports single-byte read/write operations using the Upper Byte (UB) and Lower Byte (LB) enable inputs.