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MA3D749 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARR SCHOT 40V 5A TO220DA1. Review the specifications below when checking this part for your BOM.
The MA3D749 and MA3D749A are silicon epitaxial planar Schottky Barrier Diodes with a common cathode configuration. The MA3D749 supports a repetitive peak reverse voltage of 40 V, while the MA3D749A supports 45 V. Both variants handle an average forward current of 5 A and a non-repetitive peak forward surge current of 90 A. Key electrical parameters include a maximum forward voltage of 0.55 V at 2.5 A and a reverse current of 1.0 mA at rated voltage. They operate within a junction temperature range of -40 to +125 °C and feature a thermal resistance of 3.0 °C/W.
Verify the specific part number suffix (MA3D749 vs MA3D749A) against the required reverse voltage rating before procurement. Confirm the package type is TO-220D-A1. Check the manufacturer's official website for the latest maintenance or discontinuation status, as specifications may change without notice.
Select the MA3D749 for circuits requiring a 40 V reverse voltage rating, or the MA3D749A for 45 V requirements. Ensure the design accommodates the 5 A average forward current limit and the 90 A surge capability. Verify that the operating environment stays within the specified -40 to +125 °C junction temperature range.
This component belongs to Panasonic's Schottky Barrier Diode series, utilizing silicon epitaxial planar technology. It is housed in a TO-220D-A1 package, suitable for through-hole mounting. The device complies with the RoHS Directive (EU 2002/95/EC).
Public confirmed substitute part numbers are not available in the provided documentation.
The primary difference is the repetitive peak reverse voltage rating. The MA3D749 is rated for 40 V, whereas the MA3D749A is rated for 45 V.
The thermal resistance from junction to case (Rth(j-c)) is 3.0 °C/W.
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