MA4L021-134

RF Diode Overview

The MA4L021-134 is a silicon PIN limiter diode die from the MA4L series, designed for high-signal applications. It features gold doping to achieve lower carrier recovery time. The device provides low insertion loss at zero bias and fast signal response. Key electrical specifications include a breakdown voltage of 20V minimum and 35V maximum, a junction capacitance of 0.16 pF typical at 10V reverse bias, and a series resistance of 2.10 ohms at 500 MHz. At 9.4 GHz, it offers an incident peak power limiting level of 41 dBm (10 dB limiting) with a recovery time of 31 ns.

RF Diode Feature Summary

• Gold-doped silicon construction optimized for rapid signal recovery times in high-power environments.
• Designed to provide low insertion loss and noise figure when unbiased.
• Capable of handling high peak and average operating power levels.

RF Diode Applications

• Passive limiter control circuits for protecting sensitive receiver components.
• Protection of low noise amplifiers (LNAs), detectors, and mixers.
• High signal applications within the 10 MHz to 18 GHz frequency range.

RF Diode Procurement Notes

Verify the specific package suffix required for your design, as the base part number corresponds to the bare die (suffix -134). Confirm that the gold-doped variant meets your recovery time requirements compared to non-gold options. Ensure your assembly process adheres to the specified mounting temperature limits to prevent damage to the semiconductor junction.

RF Diode Selection Notes

Select this component when fast recovery time is critical, as indicated by the gold doping. Compare the 2.10 ohm series resistance against circuit impedance requirements. Evaluate the 0.16 pF junction capacitance for high-frequency performance needs. Consider the thermal resistance if multiple devices are used in close proximity on the substrate.

RF Diode Part Context

This component belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes. These devices utilize small and medium I-region lengths to balance leakage power and recovery speed. The MA4L021-134 specifically represents the gold-doped version of the MA4L021 base structure available as a chip die.

RF Diode Replacement Considerations

The MA4L022-134 is a similar gold-doped alternative with slightly different capacitance and resistance values. For non-gold doped requirements offering lower flat leakage, consider the MA4L101-134 or MA4L401-134, though these have significantly higher carrier lifetimes.