RF Diode MA4P607-212 product image

MA4P607-212

$22.24
  • Description:RF DIODE PIN 1000V 37.5W DIE
  • Series:-

SKU:edf6317d0ae5 Category: Brand:

  
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MA4P607-212 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE PIN 1000V 37.5W DIE. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MA4P607-212

  • Description:RF DIODE PIN 1000V 37.5W DIE
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):1000V
  • Current - Max:-
  • Capacitance @ Vr, F:1.3pF @ 100V, 1MHz
  • Resistance @ If, F:400mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):37.5 W
  • Operating Temperature:175°C (TJ)
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for MA4P607-212

MA4P607-212

RF Diode Overview

The MA4P607-212 is a silicon PIN diode chip manufactured by MACOM Technology Solutions. It features a hermetically sealed Cermachip construction with glass passivation, designed for high-reliability applications. The device provides a reverse voltage rating of 1000 VDC and a maximum capacitance of 1.3 pF at -10 V. Its series resistance is 0.4 Ω at 500 MHz with a forward current of 10 mA. The chip has a carrier lifetime of 12 µs and an I-region length of 127 µm. Physical dimensions are 62 x 62 mils with a thickness of 18.5 mils.

RF Diode Feature Summary

  • Hermetically sealed Cermachip construction using hard glass passivation to encapsulate the PIN junction area.
  • Optimized I-region length for low capacitance, low series resistance, and high breakdown voltage performance.
  • Suitable for broadband, high-frequency micro-strip hybrid assemblies due to small size and low parasitics.

RF Diode Applications

  • High-power RF switching circuits
  • Attenuator circuit design
  • Military control circuit applications

RF Diode Procurement Notes

Verify component authenticity through authorized MACOM distributors or direct manufacturer channels. Confirm datasheet revision DC-0008899 Rev V32 matches the supplied documentation. Ensure handling procedures follow specified guidelines to prevent contamination from perspiration or skin oils during assembly.

RF Diode Selection Notes

Select this part for applications requiring high reverse voltage isolation combined with moderate switching speeds. The 127 µm I-region length balances on-state resistance and carrier lifetime. Verify thermal management requirements against the specified theta value and operating temperature range of -55°C to +175°C.

RF Diode Part Context

This component belongs to MACOM's Silicon PIN/NIP Diode Chips family. It utilizes the company's time-proven hard glass Cermachip process. The product line covers various voltage ratings up to 3000 V, optimized for minimizing parametric trade-offs in control circuit applications.

RF Diode Replacement Considerations

Consult the official MACOM datasheet for equivalent part numbers within the same voltage and capacitance class. Verify physical footprint compatibility (62 x 62 mils) and electrical parameters such as series resistance and carrier lifetime before substitution.

RF Diode FAQ

What is the recommended die attachment method for the MA4P607-212?

The chip can be mounted using an 80Au/Sn20 eutectic solder preform, RoHS compliant solders, or electrically conductive silver epoxy. A work surface temperature of +255°C is recommended for hot gas die bonding.

How should the MA4P607-212 be handled to prevent damage?

Use plastic-tipped tweezers or vacuum pickup to avoid contamination from perspiration, salts, or skin oils. Minimize abrasion and mechanical shock during bulk handling.

What is the maximum mounting temperature allowed for this chip?

The chip must not be exposed to temperatures greater than +320°C for more than 10 seconds during the mounting process.

MA4P607-212MA4P607-212
$22.24
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