— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:DIGITAL ATTENUATOR,15.5 DB,5-BIT
- Series:-
- Mfr:MACOM Technology Solutions
- Package:Tube
- Attenuation Value:0.5dB ~ 15.5dB
- Frequency Range:0 Hz ~ 2 GHz
- Power (Watts):-
- Impedance:50 Ohms
- Grade:-
- Qualification:-
- Package / Case:16-SOIC (0.295", 7.50mm Width)
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Overview
The MAAD-007084-000100 is a GaAs FET 5-bit digital attenuator with an integral TTL driver, manufactured by MACOM Technology Solutions. It operates within a frequency range of 0 Hz to 2.0 GHz and features a 50 Ohm impedance. The device provides a total attenuation range from 0.5 dB to 15.5 dB with a step size of 0.5 dB. It is housed in a 16-SOIC package (0.295 inch / 7.50 mm width) and is currently active.
Feature Summary
- Integrates a TTL driver for direct logic control
- Utilizes GaAs FET technology for RF signal processing
- Provides precise 5-bit digital attenuation steps
Applications
- RF signal path gain control
- Test and measurement equipment
- Communication systems requiring variable attenuation
Procurement Notes
Verify the specific part number MAAD-007084-000100 against official MACOM documentation to ensure compatibility with system requirements. Confirm that the 16-SOIC package dimensions and pinout match the design layout. Check for any recent Product Change Notices or marking updates that may affect integration. Ensure the operating environment meets the specified electrical parameters for reliable performance.
Selection Notes
Select this component when a compact, digitally controlled attenuator is required for frequencies up to 2.0 GHz. The integral TTL driver simplifies interface design by eliminating external control circuitry. Consider the 50 Ohm impedance matching for standard RF applications. The GaAs FET construction offers robust performance for general-purpose RF attenuation needs.
Part Context
This device belongs to the MAAD-007084 series of digital attenuators from MACOM. It is designed for applications requiring precise, digitally programmable attenuation in RF circuits. The series utilizes advanced GaAs FET technology to achieve low insertion loss and high linearity within its operational bandwidth.
Replacement Considerations
Consult official MACOM substitution guides for verified alternatives. Generic substitutes may not match the integral TTL driver or specific GaAs FET characteristics.
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