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MAC4DCM-001 is listed in the Triacs range at ChipApex. The manufacturer field lists onsemi. Its product description is TRIAC 600V 4A IPAK. Review the specifications below when checking this part for your BOM.
The MAC4DCM-001 is a silicon bidirectional thyristor (TRIAC) manufactured by onsemi, designed for industrial and consumer applications. It features a DPAK-3 surface mount package with a peak repetitive off-state voltage of 600 V and an on-state RMS current rating of 4.0 A at a case temperature of 108°C. The device offers high immunity to dv/dt (500 V/µs at 125°C) and di/dt (6.0 A/ms at 125°C). Electrical characteristics include a maximum gate trigger current of 35 mA and a holding current of 35 mA. Operating junction temperatures range from -40°C to 125°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and shipping configuration. Confirm that the component meets required environmental standards such as RoHS compliance if applicable to the design. Cross-reference the datasheet revision number to validate all electrical parameters before finalizing procurement specifications.
Select this component based on the required blocking voltage and RMS current ratings relative to the application's thermal environment. Ensure the circuit design accommodates the specified gate trigger currents and voltages across the full operating temperature range. Verify that the PCB layout supports the DPAK-3 package dimensions and thermal dissipation requirements for reliable operation.
This part belongs to the MAC4DCM/CN series of TRIACs from onsemi. These devices are engineered for high-volume production in cost-sensitive industrial and consumer electronics markets. The series provides standardized performance metrics for general-purpose AC power switching applications requiring robust thyristor technology.
MAC4DCN-001: Offers 800V blocking voltage instead of 600V.
The peak non-repetitive surge current is 40 A for one full cycle sine wave at 60 Hz.
The typical holding current increases with junction temperature, reaching approximately 60 mA at 125°C.
The critical rate of rise of commutating current (di/dt)c is typically 8.4 A/ms at 125°C.
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