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MAC4DCN-001 is listed in the Triacs range at ChipApex. The manufacturer field lists onsemi. Its product description is TRIAC 800V 4A IPAK. Review the specifications below when checking this part for your BOM.
The MAC4DCN-001 is a silicon bidirectional thyristor (TRIAC) manufactured by onsemi, designed for industrial and consumer applications. It features an 800 V peak repetitive off-state voltage and a 4.0 A RMS on-state current rating at a case temperature of 108°C. The device operates within a junction temperature range of -40°C to 125°C and offers high immunity to dv/dt (500 V/µs at 125°C) and di/dt (6.0 A/ms at 125°C). Packaged in a DPAK-3 (CASE 369D), it includes passivated die technology for reliability and meets UL 94 V-0 epoxy standards.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. The MAC4DCN-001 designation corresponds to the standard rail packaging format. Confirm RoHS compliance status if required, as lead-free variants may carry distinct suffixes such as 'G'. Ensure compatibility with the intended thermal management strategy given the specified junction-to-case thermal resistance values.
Select this component when an 800 V blocking capability and 4 A continuous current handling are required in a surface-mount form factor. Evaluate the thermal derating curves to ensure the RMS current rating remains sufficient under expected operating temperatures. Verify that the gate trigger characteristics align with the driving logic levels available in the target application circuit design.
This part belongs to the MAC4DCM/MAC4DCN family of TRIACs from onsemi. The 'N' suffix specifically denotes the 800 V voltage rating variant, distinguishing it from the 600 V rated 'M' variant. Both share identical physical dimensions and electrical performance profiles except for the maximum blocking voltage specification.
MAC4DCM-001 serves as a direct functional substitute within the same series, differing only in its lower 600 V voltage rating. Ensure the replacement voltage rating exceeds the peak line voltage present in the specific application circuit before implementation.
The critical rate of rise of commutating current is rated at 6.0 A/ms at a junction temperature of 125°C.
The typical holding current increases with junction temperature, ranging from approximately 6 mA at low temperatures to 35 mA maximum at 125°C.
The device can withstand a peak non-repetitive surge current of 40 A for one full cycle sine wave at 60 Hz with a junction temperature of 125°C.
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