MADP-030015-13140G

RF Diode Overview

The MADP-030015-1314G is a silicon PIN diode surmount chip from the MAPD-0xx015 series, utilizing MACOM's HMIC process. It features a 15 µm I-region length and an ODS-1314 case style with a 0603 outline. The device operates within a temperature range of -55°C to +125°C. Key electrical specifications include a maximum reverse voltage of 115 V, a typical capacitance of 0.78 pF at 1 GHz (-40 V bias), and a typical series resistance of 0.49 Ω at 1 GHz (+70 mA forward current). It supports a maximum forward current of 500 mA and offers high power handling capabilities.

RF Diode Feature Summary

• Utilizes a patented HMIC process with two silicon pedestals embedded in low-loss glass for exceptional heat transfer.
• Features a vertical topology with selective backside metallization, eliminating the need for wirebonds.
• Encapsulated with silicon nitride and a polymer layer to protect the junction and anode air-bridge during assembly.
• Designed as a packageless surface mount device with low parasitic inductance (0.4 nH) and excellent RC constants.

RF Diode Applications

• Higher frequency switch elements requiring superior performance compared to plastic package counterparts.
• Circuits with moderate incident power levels up to 50 dBm CW.
• Applications involving peak power up to 75 dBm with pulse widths ≤1 µs and duty cycles ≤0.01%.

RF Diode Procurement Notes

Verify the specific ordering suffix when sourcing this component. The 'G' suffix denotes a 100-piece gel pack configuration, which differs from the 'P' suffix used for 3000-piece reels. Confirm packaging requirements with the manufacturer or authorized distributor to ensure the correct quantity format is received for prototyping or production needs.

RF Diode Selection Notes

Select the MADP-030015 variant over the MADP-017015 when higher capacitance is acceptable or required for specific circuit impedance matching. This model provides a lower thermal resistance of 13 °C/W compared to 30 °C/W in the 017015 version, making it suitable for applications where efficient heat dissipation is critical despite the slightly higher capacitive load.

RF Diode Part Context

This component belongs to the MAPD-0xx015 SURMOUNT family, characterized by 15 µm I-region lengths and HMIC fabrication technology. These devices are designed as bare chips rather than traditional packaged diodes, allowing for direct surface mounting on substrates. The ODS-1314 case style defines the physical dimensions and contact pad layout for these specific surmount chips.

RF Diode Replacement Considerations

The MADP-017015-1314G is a related part within the same datasheet but exhibits different electrical characteristics, specifically lower capacitance and higher thermal resistance. Direct substitution requires verifying that the circuit design can accommodate the change in capacitance from approximately 0.32 pF to 0.78 pF and the difference in thermal management requirements.

RF Diode FAQ

What is the thermal resistance of the MADP-030015-1314G?

The thermal resistance (θ) is typically 13 °C/W, measured with the die mounted in an ODS-186 package.

How is the MADP-030015-1314G attached to a circuit board?

Attachment is achieved through surface mount technology using solder attachment onto hard or soft substrates. Recommended solders include 80Au/20Sn or RoHS compliant variants, with conductive silver epoxy also usable for average power applications around 1 W.

What is the maximum operating temperature for this device?

The maximum operating temperature is +125°C, while the storage temperature range extends up to +150°C.