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MASTERGAN1L is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is Linear IC's. Review the specifications below when checking this part for your BOM.
The MASTERGAN1L is a System-in-Package (SiP) integrating two enhancement-mode GaN HEMTs and an optimized gate driver in a half-bridge configuration. It features 600V breakdown voltage, 150mΩ on-resistance, and 10A rated current. The device supports input voltages from 3.3V to 15V and consumes only 20mW no-load power. Designed for high-frequency operation, it enables compact, heatsink-free designs with power densities up to 34 W/inch³.
Verify the specific suffix (e.g., TR for tape and reel) against your manufacturing requirements. Confirm the component status as Not Recommended for New Design (NRND) before finalizing long-term production plans. Ensure compatibility with existing resonant controllers like L6599A for intended reference designs.
Select this component for applications requiring high efficiency and reduced PCB area. It is suitable for designs targeting output powers up to 500W. Consider its integration level when comparing against discrete GaN solutions to evaluate BOM reduction benefits.
Part of the MasterGaN family, the MASTERGAN1L improves upon previous generations by offering enhanced standby power consumption and support for higher switching frequencies. It represents STMicroelectronics' approach to combining GaN technology with integrated drivers for robust performance.
MASTERGAN4L is a related variant within the same family. Verify if the alternative meets specific current or resistance requirements for your design.
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