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The MASTERGAN2 is a high-power-density system-in-package integrating a gate driver with two enhancement-mode GaN HEMTs in a half-bridge configuration. It features 650V breakdown voltage, 150mΩ low-side and 225mΩ high-side on-resistance, and peak output currents of 10A (low-side) and 6.5A (high-side). Operating from 3.3V to 15V supply, it includes UVLO, thermal protection, and an integrated bootstrap diode within a compact 9x9mm QFN package.
Verify the specific suffix TR indicates tape-and-reel packaging when ordering. Confirm RoHS3 compliance status as required by project specifications. Ensure the 31-QFN package dimensions align with PCB layout constraints. Check for any recent product change notices or end-of-life notifications prior to final design approval.
Select this component for designs requiring high power density and simplified bill of materials. The integrated nature reduces external component count compared to discrete solutions. Consider the 9x9mm footprint for space-constrained applications. Evaluate thermal performance requirements given the integrated package structure.
Part of the MasterGaN family, which represents advanced system-in-package solutions combining GaN technology with smart drivers. This series aims to improve efficiency and reduce size in power conversion topologies like active clamp flyback. It builds upon previous generations with enhanced features for higher frequency operation.
MASTERGAN1 is the preceding generation in the same family. Verify pin-to-pin compatibility if substituting between versions. No other direct public substitute part numbers are confirmed for this specific model.