MASTERGAN2TR

Full Half-Bridge (H Bridge) Drivers Overview

The MASTERGAN2TR is a high-power density half-bridge driver integrating two enhancement-mode GaN HEMTs in a 31-QFN package. It features a 600V drain-source blocking voltage with asymmetric on-resistance of 150 mΩ (Low Side) and 225 mΩ (High Side). The device supports peak output currents of 17A, with continuous ratings of 10A for the Low Side and 6.5A for the High Side. Operating temperatures range from -40°C to +125°C TJ, powered by a supply voltage between 3.3V and 15V.

Full Half-Bridge (H Bridge) Drivers Feature Summary

• Integrates a gate driver with two asymmetric enhancement-mode GaN transistors in a compact system-in-package.
• Includes built-in protection mechanisms such as overtemperature shutdown and UVLO for both high-side and low-side channels.
• Features an internal bootstrap diode and interlocking function to simplify circuit design and enhance reliability.

Full Half-Bridge (H Bridge) Drivers Applications

• Soft-switching converter topologies
• Active-rectification power supplies
• High-frequency DC-DC converters

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix TR indicates tape-and-reel packaging configuration. Confirm RoHS compliance status via official datasheets. Check moisture sensitivity level requirements for storage and handling. Ensure compatibility with 3.3V to 15V logic inputs. Validate thermal performance parameters against application constraints.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component for applications requiring high power density and simplified bill of materials. The integrated GaN solution reduces external component count compared to discrete drivers. Consider the asymmetric RDS(ON) values when designing for specific efficiency targets. Verify that the 31-QFN package fits within the mechanical constraints of the target enclosure.

Full Half-Bridge (H Bridge) Drivers Part Context

This part belongs to the MasterGaN2 family, representing an evolution in STMicroelectronics' integrated GaN technology. It builds upon previous generations by offering improved efficiency and size reduction for advanced power conversion topologies. The series targets industrial and telecom power supplies where space and weight are critical factors.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

Check for pin-to-pin compatible alternatives within the MasterGaN family. Verify if older versions like MasterGaN1 meet the required electrical specifications. Ensure any substitute maintains the same 600V rating and QFN package dimensions.