MASTERGAN3TR

Full Half-Bridge (H Bridge) Drivers Overview

The MASTERGAN3TR is a system-level power package integrating a half-bridge driver and two enhanced-mode GaN transistors. It features a 650 V rating with an RDS(ON) of 225 mΩ for the low-side and 450 mΩ for the high-side. Maximum drain currents are 6.5 A (low-side) and 4 A (high-side). The device operates from -40°C to 125°C in a compact 9x9 mm QFN package.

Full Half-Bridge (H Bridge) Drivers Feature Summary

• Integrates half-bridge driver and dual 650 V enhanced-mode GaN HEMTs
• Includes UVLO protection, shoot-through prevention, and thermal shutdown
• Features integrated bootstrap diode and logic-compatible inputs

Full Half-Bridge (H Bridge) Drivers Applications

• High-power density half-bridge converters
• High-voltage driver systems
• GaN-based power electronics design

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix 'TR' indicates tape-and-reel packaging configuration against official STMicroelectronics documentation. Confirm RoHS compliance status and ensure the component matches the standard MASTERGAN3 electrical specifications before procurement.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component for applications requiring integrated GaN switching and driving capabilities. Ensure the design supports the 9x9 mm QFN footprint and accommodates the specified voltage ratings and current limits for optimal performance.

Full Half-Bridge (H Bridge) Drivers Part Context

MASTERGAN3 belongs to the MasterGAN family of system-level packages combining GaN transistors with gate drivers. This integration reduces bill of materials and simplifies layout compared to discrete solutions.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

No public confirmed substitute part numbers are available for direct replacement.