MASTERGAN4L

Full Half-Bridge (H Bridge) Drivers Overview

The MASTERGAN4L is a 600 V half-bridge driver utilizing GaN HEMT SiP technology, integrating two enhancement-mode GaN power transistors and an embedded gate driver. It features UVLO protection on both high-side and low-side sections, an internal bootstrap diode, and an interlocking function to prevent cross-conduction. The device operates within the industrial temperature range of -40°C to 125°C and is housed in a compact 9x9 mm QFN package.

Full Half-Bridge (H Bridge) Drivers Feature Summary

• Integrates a gate driver with two enhancement-mode GaN HEMTs in a half-bridge configuration
• Features UVLO protection and an interlocking function for safe operation
• Includes an internal bootstrap diode and dedicated shutdown pin
• Supports inputs compatible with 3.3 V to 15 V logic levels

Full Half-Bridge (H Bridge) Drivers Applications

• LED lighting and displays
• Smart chargers and USB Type-C PD adapters
• Industrial power supplies and UPS systems
• Server and telecom AC-DC power supply units

Full Half-Bridge (H Bridge) Drivers Procurement Notes

Verify the specific suffix against official STMicroelectronics documentation to confirm exact electrical characteristics and packaging options. Confirm RoHS compliance status and ensure the selected variant matches the required thermal and voltage specifications for the target application design.

Full Half-Bridge (H Bridge) Drivers Selection Notes

Select this component for designs requiring high power density and simplified layout due to the integrated system-in-package solution. Consider the 600 V rating and 225 mΩ RDS(ON) for efficiency requirements. Ensure the input interface matches the control logic voltage range and verify thermal management capabilities within the specified operating temperature range.

Full Half-Bridge (H Bridge) Drivers Part Context

The MASTERGAN4L belongs to the MasterGaN series, which improves upon previous generations by offering enhanced standby power consumption and support for higher switching frequencies. This series leverages GaN HEMT technology to achieve significantly smaller form factors compared to traditional MOSFET-based solutions while maintaining robust performance in offline applications.

Full Half-Bridge (H Bridge) Drivers Replacement Considerations

MASTERGAN1L is a related variant within the same family offering similar integration but potentially different optimization parameters.