MAT03EH

Overview

The MAT03EH is a low noise, matched dual PNP transistor manufactured by Analog Devices Inc. It features a TO-78 metal can package and operates within an extended industrial temperature range of -40°C to +85°C. Key electrical specifications at 25°C include a maximum offset voltage of 100 µV, a minimum current gain of 100, and a typical gain bandwidth of 190 MHz. The device exhibits a maximum noise voltage density of 1 nV/√Hz at 1 kHz and a bulk resistance typically ranging from 0.3 Ω to 0.75 Ω. Absolute maximum ratings specify a collector-base voltage of 36 V and total power dissipation of 500 mW in free air.

Feature Summary

• Dual monolithic PNP transistors with tight parametric matching for high precision applications
• Low noise characteristics suitable for demanding preamplifier designs
• Internal base-emitter protection diodes to prevent breakdown-induced degradation
• High current gain and excellent logarithmic conformance for accurate current mirrors

Applications

• Super low noise amplifier circuits requiring minimal input voltage noise
• Precision current mirrors and active load stages utilizing matched gain
• Digitally programmable bipolar current pumps for DAC interfacing
• Low noise microphone preamplifiers with high linearity requirements

Procurement Notes

Verify the specific suffix EH against the ordering guide to confirm the 100 µV offset voltage limit and TO-78 packaging. Ensure electrostatic discharge precautions are implemented during handling due to device sensitivity. Confirm that the application environment remains within the specified -40°C to +85°C operating temperature range to guarantee performance parameters.

Selection Notes

Select the MAT03EH when a maximum offset voltage of 100 µV is required rather than the 200 µV limit of the MAT03FH variant. Consider the TO-78 package constraints for thermal management, as power dissipation must be derated above 70°C ambient temperature. Evaluate the need for internal ESD protection if external clamping is not present in the circuit design.

Part Context

The MAT03 series consists of low noise, matched dual PNP transistors designed for high-frequency and precision analog applications. The MAT03EH represents the version with tighter offset voltage specifications compared to other variants in the family. These devices are fabricated using monolithic technology to ensure consistent matching between the two integrated transistors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should verify pin compatibility and electrical parameter overlaps with alternative matched transistor arrays before substitution.

FAQ

What is the maximum offset voltage for the MAT03EH?

The maximum offset voltage (VOS) for the MAT03EH is 100 µV at 25°C.

How does the MAT03 protect against base-emitter breakdown?

Internal protection diodes across the base-emitter junction clamp any reverse potential to prevent breakdown conditions that could degrade gain and matching performance.

What is the typical gain bandwidth of the MAT03EH?

The typical gain bandwidth is 190 MHz.