MAT03FH

Overview

The MAT03FH is a dual monolithic PNP transistor from Analog Devices, housed in a TO-78 metal can package. It features a maximum offset voltage of 200 µV at 25°C and operates within an extended industrial temperature range of -40°C to +85°C. Key electrical specifications include a minimum current gain (hFE) of 60 at IC = 1 mA, a typical noise voltage density of 0.7 nV/√Hz at 1 kHz, and a bulk resistance (rBE) of 0.3 Ω. The device supports collector currents up to 20 mA with a breakdown voltage (BVCEO) of 36 V.

Feature Summary

• Dual matched PNP transistors on a single monolithic die for high parametric consistency
• Low noise performance with 1 nV/√Hz maximum specification at 1 kHz
• Internal base-emitter protection diodes to prevent junction breakdown and parameter degradation
• Tight current gain matching with a maximum mismatch of 6% for the FH grade

Applications

• Super low noise amplifier circuits requiring parallel transistor configurations
• Precision current mirrors and active load stages demanding tight gain matching
• Digitally programmable bipolar current pumps utilizing Wilson current sources
• Low noise microphone preamplifiers with high quiescent current operation

Procurement Notes

Verify the specific suffix FH against the Ordering Guide to confirm the 200 µV offset voltage limit and TO-78 packaging. Ensure ESD precautions are implemented during handling due to the sensitivity of the internal protection circuitry. Confirm that the application environment remains within the specified -40°C to +85°C operating temperature range to maintain guaranteed performance parameters.

Selection Notes

Select the MAT03FH when a maximum offset voltage of 200 µV is acceptable, offering a cost-effective alternative to the EH grade which specifies 100 µV. Consider the TO-78 package constraints for thermal management, noting the linear derating requirement above 70°C ambient. Evaluate the 6% maximum current gain mismatch against system requirements for current mirror accuracy compared to tighter grades.

Part Context

The MAT03 series consists of dual monolithic PNP transistors designed for applications requiring excellent parametric matching and high-frequency performance. The family includes variants like the MAT03E and MAT03F, differentiated primarily by offset voltage limits and temperature ranges. The MAT03FH specifically targets industrial environments where moderate offset precision is sufficient.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Analog Devices for potential cross-references or evaluate other matched dual PNP transistor arrays based on specific offset and noise requirements.

FAQ

What is the maximum offset voltage for the MAT03FH?

The maximum offset voltage for the MAT03FH is 200 µV at TA = +25°C.

How does the MAT03 protect against base-emitter breakdown?

Internal protection diodes are integrated across the base-emitter junctions to clamp reverse potentials, preventing breakdown conditions that could degrade gain and matching performance.

What is the typical noise voltage density of the MAT03FH?

The typical noise voltage density is 0.7 nV/√Hz at a frequency of 1 kHz.