SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MAT12AHZ is a dual, NPN-matched transistor pair designed for ultralow noise audio systems. It features an extremely low input base spreading resistance of typically 28 Ω and high current gain exceeding 600 at IC = 1 mA. The device guarantees excellent current gain matching with a typical delta hFE of 0.5% and a maximum offset voltage (VOS) of 200 μV. Operating over an extended temperature range of −40°C to +85°C, it provides a gain bandwidth product of 200 MHz and very low voltage noise density of 1 nV/√Hz maximum at 100 Hz.
Verify the specific ordering suffix AHZ indicates RoHS compliance when sourcing this component. Confirm the package option H-06 matches the required 6-pin metal header footprint for your assembly process. Ensure the operating temperature range of −40°C to +85°C aligns with your system's environmental requirements before finalizing procurement.
Select the MAT12AHZ when ultralow noise and precise matching are critical for signal integrity. Its high current gain and low base spreading resistance offer superior performance compared to standard monolithic amplifiers in balanced configurations. Consider its suitability for current mirror applications where low VOS eliminates the need for offset trimming in most circuit designs.
The MAT12 series serves as a direct replacement for the MAT02, offering guaranteed performance over an extended temperature range. It belongs to Analog Devices' portfolio of matched transistor arrays specifically engineered for high-fidelity analog signal processing. The device utilizes a TO-78 metal header package to ensure thermal stability and mechanical robustness in precision instrumentation.
The MAT12 is explicitly documented as a good replacement for the MAT02. Verify that the MAT02's original specifications meet the MAT12's extended temperature range and noise requirements before substitution.