MAX11008BETM+

Overview

The MAX11008BETM+ is a dual RF LDMOS bias controller featuring nonvolatile memory. It operates on a supply voltage of 2.7V to 5.25V with a typical supply current of 3mA. The device supports an operating temperature range from -40°C to +85°C and is housed in a 48-TQFN (7x7mm) package. It is RoHS3 compliant and has unlimited moisture sensitivity level.

Feature Summary

• Dual output capability for RF LDMOS applications
• Integrated nonvolatile memory for configuration retention
• Compact 48-lead TQFN packaging

Applications

• RF power amplifier biasing
• Wireless communication systems
• Base station equipment

Procurement Notes

Verify the specific suffix 'BETM+' against the manufacturer's official documentation to ensure correct pinout and electrical specifications. Confirm that the 48-TQFN package dimensions match your PCB footprint requirements. Check for RoHS3 compliance status if required by your manufacturing standards.

Selection Notes

Select this component when dual independent bias channels are required for RF LDMOS transistors. The integrated nonvolatile memory simplifies system design by retaining calibration data without external storage. Ensure the input voltage range of 2.7V to 5.25V aligns with your system power rails.

Part Context

This part belongs to the MAX11008 family of bias controllers designed specifically for RF power amplifiers. It integrates precision voltage references and control loops into a single compact solution, reducing the component count typically needed for multi-channel bias networks in high-frequency applications.

Replacement Considerations

Cross-reference with other variants in the MAX11008 series, such as MAX11008EVC16, ensuring functional compatibility. Verify package type and pinout alignment before substitution.