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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Analog Devices Inc./Maxim Integrated
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 12.6V
- Logic Voltage - VIL, VIH:-
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):65ns, 65ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:8-SOIC-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):175 V
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Overview
The MAX15012DASA+ is a high-speed half-bridge MOSFET gate driver manufactured by Analog Devices Inc. under the Maxim Integrated brand. It features a non-inverting configuration with two drivers and two outputs, housed in an 8-SOIC-EP package. The device supports a maximum high-side voltage of 175 V via bootstrap operation. Electrical specifications include a peak output current of 2 A, a supply voltage range of 8 V to 12.6 V, and typical rise/fall times of 65 ns. Operating temperatures span from -40°C to +150°C.
Feature Summary
- High-voltage capability supporting up to 175 V for high-side switching applications
- Fast switching performance with 65 ns typical rise and fall times
- Robust drive strength delivering 2 A peak output current
- Wide operating temperature range suitable for demanding industrial environments
Applications
- Industrial motor control systems
- Power supply inverters
- Battery management system switches
- High-voltage DC-DC converter topologies
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential counterfeit risks. Confirm that the specific suffix corresponds to the exposed pad SOIC package variant. Check current production status as availability may be restricted or subject to long-lead-time factory orders. Ensure thermal management requirements align with the specified junction temperature limits during integration.
Selection Notes
Select this component when driving high-side N-channel MOSFETs requiring fast switching speeds and high voltage isolation. Compare against alternatives like the MAX15012CASA+ if different packaging or slight parameter variations are needed. Consider the 175 V bootstrap limit for circuit design constraints. Evaluate thermal dissipation capabilities given the 470.6 mW power dissipation rating in the compact SOIC-EP footprint.
Part Context
This part belongs to the MAX15012 series of half-bridge gate drivers designed for high-performance power switching. It complements other Maxim Integrated solutions like the MAX15018 for different current requirements. The DASA+ suffix indicates the specific 8-SOIC-EP package configuration. It serves as a critical interface between low-voltage logic controllers and high-power semiconductor switches.
Replacement Considerations
Public confirmed substitute part numbers: MAX15012CASA+
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