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Product Detailed Parameters
- Description:IC GATE DRVR HALF-BRIDGE 8SOIC
- Series:-
- Mfr:Analog Devices Inc./Maxim Integrated
- Package:Tube
- Driven Configuration:Half-Bridge
- Channel Type:Independent
- Number of Drivers:2
- Gate Type:MOSFET (N-Channel)
- Voltage - Supply:8V ~ 12.6V
- Logic Voltage - VIL, VIH:0.8V, 2V
- Current - Peak Output (Source, Sink):2A, 2A
- Input Type:Inverting, Non-Inverting
- Rise / Fall Time (Typ):65ns, 65ns
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package:8-SOIC-EP
- Grade:-
- Qualification:-
- High Side Voltage - Max (Bootstrap):125 V
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Overview
The MAX5063DASA+ is a high-voltage half-bridge MOSFET gate driver manufactured by Analog Devices Inc./Maxim Integrated. It features dual independent drivers capable of sourcing and sinking 2A peak output current. The device operates with a supply voltage range of 8V to 12.6V and supports bootstrap voltages up to 125V. It utilizes an 8-SOIC surface-mount package. Key timing parameters include rise and fall times of 65ns, with maximum on and off delays of 40ns. The component functions with non-inverting logic inputs and maintains low quiescent current.
Feature Summary
- Supports high-side switching with bootstrap operation up to 125V for driving N-channel MOSFETs in half-bridge configurations.
Applications
- High-voltage power conversion circuits
- Motor control systems requiring half-bridge topologies
- Industrial power management applications
Procurement Notes
Verify the specific suffix 'D' against official datasheets to confirm exact electrical characteristics and pinout compatibility. Confirm RoHS compliance status and lead time restrictions due to potential limited availability or end-of-life status. Ensure the SOIC-8 footprint matches the target PCB design before procurement.
Selection Notes
Select this component when a robust half-bridge driver is required for high-voltage N-channel MOSFETs. The 2A drive strength ensures fast switching transitions suitable for efficient power stages. Consider the 125V bootstrap capability as a primary differentiator for high-side applications compared to lower-voltage alternatives.
Part Context
This part belongs to the MAX5063 series of high-voltage gate drivers. It is designed specifically for driving power MOSFETs in demanding environments. The device integrates necessary protection features and timing controls within a compact surface-mount package, serving as a critical interface between low-voltage logic and high-power switches.
Replacement Considerations
The MAX5062AASA+ is a documented alternative within the same product family offering similar half-bridge driver functionality. Verify pin-to-pin compatibility and electrical parameter alignment before substitution.
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