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The MAX5982AATE+T is a high-power MOSFET integrated with an IEEE 802.3af/at-compliant powered device interface controller. It operates within a supply voltage range of 31 V to 60 V and utilizes a TQFN-16 package. The device supports up to 70 W power handling, featuring input UVLO, inrush current control, two-step current limiting, overtemperature protection, and di/dt limits. It includes sleep mode functionality for Maintain Power Signature support and wall adapter detection.
Verify the specific suffix 'ATE' against official Analog Devices documentation to confirm temperature grade and tape-and-reel packaging specifications. Ensure compatibility with IEEE 802.3at Type 2 requirements if higher power classification is necessary. Cross-reference pinout details with the latest datasheet to match PCB layout constraints.
Select this component when a single-chip solution for PD interface and power switching is required. It is suitable for designs needing integrated inrush control and automatic source detection. Consider the thermal performance of the TQFN-16 package relative to the expected 70 W load conditions and ambient operating temperatures.
This part belongs to the MAX5982 family of high-power MOSFETs combined with PoE controllers. The series provides solutions for Powered Devices to comply with IEEE standards. Variants like MAX5982B and MAX5982C offer similar functionalities with potential differences in classification or feature sets.
MAX5982BETE+T
Yes, the device detects the presence of a wall adapter power source connection and allows a smooth switch over from the PoE power source.
It features overtemperature protection, two-step current limit with foldback, di/dt limit, and input UVLO with wide hysteresis.