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MAX620EWN
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Product Detailed Parameters
- Description：IC GATE DRVR HIGH-SIDE 18SOIC
- Series：-
- Mfr：Analog Devices Inc./Maxim Integrated
- Package：Tube,Tube
- Driven Configuration：High-Side
- Channel Type：Independent
- Number of Drivers：4
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：4.5V ~ 16.5V
- Logic Voltage - VIL, VIH：0.8V, 2.4V
- Current - Peak Output (Source, Sink)：-
- Input Type：Non-Inverting
- Rise / Fall Time (Typ)：1.7µs, 2.5µs
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：18-SOIC (0.295", 7.50mm Width)
- Supplier Device Package：18-SOIC
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
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Overview
The MAX620EWN is a quad high-side MOSFET driver manufactured by Analog Devices Inc./Maxim Integrated. It features four independent non-inverting channels designed to drive high-side power switches in demanding applications. The device operates within an extended temperature range of -40°C to +85°C and is housed in a compact 18-SOIC surface-mount package. Typical rise and fall times are specified at 1.7µs and 2.5µs respectively, supporting high-speed switching requirements for power management circuits.
Feature Summary
- Quad channel architecture providing independent control for multiple high-side MOSFETs
- Non-inverting input logic configuration for straightforward interface with control signals
- Robust high-side driving capability suitable for durable power circuit applications
Applications
- High-side gate driver for power management ICs
- MOSFET switching control in industrial equipment
- Power supply circuit design requiring high-side drive
Procurement Notes
Verify component status as the MAX620EWN is listed as obsolete and no longer manufactured by the original producer. Confirm availability of alternative sources or qualified substitute components before finalizing procurement plans. Ensure that any replacement parts meet the required electrical specifications and package dimensions to maintain system compatibility.
Selection Notes
Select this component when a quad high-side driver is required for non-inverting control applications. Consider the 18-SOIC package constraints and the -40°C to +85°C operating temperature range during thermal design. Evaluate the typical switching speeds against the specific MOSFET gate charge requirements to ensure adequate drive performance.
Part Context
This part belongs to the Maxim Integrated gate driver family, specifically designed for high-side MOSFET applications. It provides integrated solutions for driving power switches in environments requiring reliable operation across wide temperature ranges. The device supports efficient power conversion topologies commonly found in industrial and automotive systems.
Replacement Considerations
Public confirmed substitutes include the MAX620EWN+ and MAX620EWN-T variants. Verify pinout compatibility and electrical parameters when transitioning between these versions to ensure seamless integration into existing designs.
