MB85AS8MTPW-G-KBAERE1

Memory IC Overview

The MB85AS8MTPW-G-KBAERE1 is an 8 Mbit ReRAM (Resistive Random Access Memory) device organized as 1,048,576 words by 8 bits. It utilizes a Serial Peripheral Interface (SPI) compatible with Mode 0 and Mode 3. The component operates within a supply voltage range of 1.6 V to 3.6 V and supports clock frequencies up to 10 MHz. It features a 256-byte write buffer and ensures data retention for 10 years at +85°C. Endurance is rated at 1 x 10^6 rewrite operations per 4 bytes. The device is housed in an 11-pin Wafer Level Package (WLP) Type-A.

Memory IC Feature Summary

• Non-volatile memory technology utilizing resistance-variable cells for data retention without backup power.
• Integrated SPI interface supporting standard communication modes with microcontrollers.
• Includes a 256-byte data register to facilitate efficient sequential writing operations.
• Configurable block protection via status register bits to secure specific memory regions.

Memory IC Applications

• Data logging systems requiring frequent write cycles
• Embedded storage for firmware or configuration data
• IoT devices with limited power budgets

Memory IC Procurement Notes

Verify the specific package type (Type-A, B, or C) required for your PCB layout, as the suffix determines the physical bump configuration. Confirm that the design supports the 11-pin WLP form factor dimensions. Ensure the host controller SPI logic levels are compatible with the 1.6 V to 3.6 V operating range. Check for any moisture sensitivity handling requirements prior to assembly.

Memory IC Selection Notes

Select this component when high endurance is critical, as it offers significantly higher rewrite cycles compared to traditional Flash memory. It is suitable for applications needing low standby current and fast random access speeds. Consider the 11-pin WLP package constraints if space is limited. Verify that the system can handle the 256-byte page write limit efficiently.

Memory IC Part Context

This part belongs to the MB85AS8MT series of Resistive RAM devices manufactured by RAMXEED. It represents a continuation of Fujitsu Semiconductor's legacy non-volatile memory portfolio. The series focuses on providing high-speed, durable storage solutions for embedded applications where battery life and write endurance are primary design constraints.

Memory IC Replacement Considerations

Direct pin-to-pin replacements are not explicitly listed in the provided documentation. Designers should evaluate other MB85AS8MT variants (e.g., MB85AS8MTPW-G-KBBERE1) if different WLP types are needed. Cross-technology migration from Flash or EEPROM requires careful review of voltage levels and interface timing differences.