MB85AS8MTPW-G-KBBERE1

Memory IC Overview

The MB85AS8MTPW-G-KBBERE1 is an 8 Mbit (1,048,576 words x 8 bits) ReRAM memory device utilizing SPI interface. It operates within a supply voltage range of 1.6 V to 3.6 V and supports clock frequencies up to 10 MHz. The component features a 256-byte write buffer and ensures data retention for 10 years at +85°C. Endurance is rated at 1x10^6 rewrite operations per 4 bytes. It functions in ambient temperatures from -40°C to +85°C and is housed in an 11-pin Wafer Level Package.

Memory IC Feature Summary

• Resistive Random Access Memory technology providing non-volatile storage without backup batteries.
• Serial Peripheral Interface supporting Mode 0 and Mode 3 with automatic address increment capabilities.
• Integrated block protection via status register bits to secure specific memory regions.
• Low power consumption modes including standby and sleep states for battery-operated applications.

Memory IC Applications

• Data logging systems requiring frequent write cycles
• Industrial control equipment needing reliable non-volatile storage
• Automotive electronic modules operating under varying temperature conditions

Memory IC Procurement Notes

Verify the specific package type variant corresponding to the suffix KBBE against the ordering information table. Confirm that the embossed carrier tape shipping format aligns with automated assembly requirements. Ensure environmental compliance standards such as RoHS are acknowledged for the target market regulations.

Memory IC Selection Notes

Select this component when high endurance and low power consumption are critical compared to traditional Flash memory. The 11-pin WLP offers a compact footprint suitable for space-constrained designs. Verify that the system controller supports the required SPI modes and voltage levels for proper integration.

Memory IC Part Context

This part belongs to the MB85AS8MT series of ReRAM devices manufactured by RAMXEED. It replaces legacy Fujitsu Semiconductor products while maintaining identical pinouts and functionality. The series utilizes resistance-variable memory cells formed via silicon gate CMOS processes for robust data retention.

Memory IC Replacement Considerations

MB85AS8MTPW-G-KBAERE1

Memory IC FAQ

What is the maximum number of rewrite operations supported?

The device supports 1x10^6 rewrite operations per 4 bytes selected by address lines A1 to A0.

How does the device handle write protection?

Write protection is configured using BP0 and BP1 bits in the status register, allowing protection of none, the upper 1/4, upper 1/2, or all memory blocks.