MB85R1001ANC-GE1

Memory IC Overview

The MB85R1001ANC-GE1 is a 1 Mbit (128 K x 8) Ferroelectric Random Access Memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes a pseudo-SRAM parallel interface and operates within a supply voltage range of 3.0 V to 3.6 V. The device features a read/write endurance of 10^10 operations per byte and supports an operating ambient temperature range from -40 °C to +85 °C. It is housed in a 48-pin plastic TSOP package with a lead pitch of 0.50 mm.

Memory IC Feature Summary

• Nonvolatile memory architecture utilizing ferroelectric process technology for data retention without backup batteries.
• High write endurance capability supporting up to 10^10 read/write cycles per byte.
• Pseudo-SRAM interface design enabling direct replacement for standard SRAM applications.
• RoHS compliant construction adhering to REACH regulations.

Memory IC Applications

• Industrial control systems requiring high-speed nonvolatile storage
• General office equipment needing reliable data logging
• Household appliances with frequent write cycle requirements

Memory IC Procurement Notes

Verify the specific ordering suffix matches the required package and shipping form. Confirm compliance with RoHS and REACH directives for your region. Check moisture sensitivity level requirements for surface mount assembly processes. Ensure supply chain stability as availability may vary.

Memory IC Selection Notes

Select this component when a parallel interface is preferred over serial options. Consider the 48-pin TSOP footprint for PCB layout constraints. Evaluate power consumption specifications against system battery life requirements. Verify thermal performance within the specified operating temperature range.

Memory IC Part Context

This part belongs to the MB85R1001A FeRAM family produced by RAMXEED Limited, formerly Fujitsu Semiconductor Memory Solutions Limited. The manufacturer maintains original part numbering conventions while continuing product support. The device represents a transition in manufacturing lineage while preserving technical specifications.

Memory IC Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Verify pin compatibility and electrical characteristics if considering alternative manufacturers' FeRAM or SRAM devices.