Memory IC MB85R1002ANC-GE1 product image

MB85R1002ANC-GE1

$7.37
  • Description:IC FRAM 1MBIT PARALLEL 48TSOP
  • Series:-
  • Mfr:RAMXEED
  • Package:Tray

SKU:34025382c191 Category: Brand:

  
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MB85R1002ANC-GE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 1MBIT PARALLEL 48TSOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MB85R1002ANC-GE1

  • Description:IC FRAM 1MBIT PARALLEL 48TSOP
  • Series:-
  • Mfr:RAMXEED
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FRAM
  • Technology:FRAM (Ferroelectric RAM)
  • Memory Size:1Mbit
  • Memory Organization:64K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:150ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package:48-TSOP
  • Access Time:150 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MB85R1002ANC-GE1

MB85R1002ANC-GE1

Memory IC Overview

The MB85R1002ANC-GE1 is a 1 Mbit Ferroelectric Random Access Memory (FeRAM) organized as 64K x 16 bits. It utilizes a pseudo-SRAM parallel interface within a 48-pin plastic TSOP package. The device operates on a supply voltage ranging from 3.0 V to 3.6 V, with typical operating current of 10 mA and standby current of 10 µA. It supports read/write endurance of 10^10 cycles per byte and data retention of up to 55 years at +35°C. The component functions within an ambient temperature range of -40°C to +85°C.

Memory IC Feature Summary

  • Nonvolatile memory capability retaining data without backup power
  • High endurance supporting 10^10 read/write operations per byte
  • Pseudo-SRAM parallel interface for direct system integration
  • Independent control of high and low data bytes via LB and UB pins

Memory IC Applications

  • Industrial systems requiring frequent data logging
  • Embedded controllers needing rapid random access
  • Equipment demanding long-term data retention without battery maintenance

Memory IC Procurement Notes

Verify the specific ordering suffix GE1 against the manufacturer's official documentation to confirm the tray shipping format and RoHS compliance status. Ensure that the procurement specifications align with the required 48-pin TSOP package dimensions and moisture sensitivity level 3 handling requirements during assembly.

Memory IC Selection Notes

Select this component when a parallel interface is required for high-speed data throughput in nonvolatile storage applications. It is suitable for designs where SRAM-like timing is preferred over serial protocols. Consider the 16-bit data width and the specific 3.0 V to 3.6 V voltage range constraints during system architecture planning.

Memory IC Part Context

This part belongs to the MB85R1002A series of FeRAM devices manufactured by RAMXEED Limited. The series leverages ferroelectric process technology combined with silicon gate CMOS processes. It serves as a drop-in replacement for SRAM in many applications while providing nonvolatile data storage capabilities.

Memory IC Replacement Considerations

Consult the official datasheet for confirmed substitute part numbers within the same product family. Verify pin compatibility and electrical characteristics before substituting.

MB85R1002ANC-GE1MB85R1002ANC-GE1
$7.37
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