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MB85R1002ANC-GE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 1MBIT PARALLEL 48TSOP. Review the specifications below when checking this part for your BOM.
The MB85R1002ANC-GE1 is a 1 Mbit Ferroelectric Random Access Memory (FeRAM) organized as 64K x 16 bits. It utilizes a pseudo-SRAM parallel interface within a 48-pin plastic TSOP package. The device operates on a supply voltage ranging from 3.0 V to 3.6 V, with typical operating current of 10 mA and standby current of 10 µA. It supports read/write endurance of 10^10 cycles per byte and data retention of up to 55 years at +35°C. The component functions within an ambient temperature range of -40°C to +85°C.
Verify the specific ordering suffix GE1 against the manufacturer's official documentation to confirm the tray shipping format and RoHS compliance status. Ensure that the procurement specifications align with the required 48-pin TSOP package dimensions and moisture sensitivity level 3 handling requirements during assembly.
Select this component when a parallel interface is required for high-speed data throughput in nonvolatile storage applications. It is suitable for designs where SRAM-like timing is preferred over serial protocols. Consider the 16-bit data width and the specific 3.0 V to 3.6 V voltage range constraints during system architecture planning.
This part belongs to the MB85R1002A series of FeRAM devices manufactured by RAMXEED Limited. The series leverages ferroelectric process technology combined with silicon gate CMOS processes. It serves as a drop-in replacement for SRAM in many applications while providing nonvolatile data storage capabilities.
Consult the official datasheet for confirmed substitute part numbers within the same product family. Verify pin compatibility and electrical characteristics before substituting.
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