Memory IC MB85R256FPF-G-BND-ERE1 product image

MB85R256FPF-G-BND-ERE1

  • Description:IC FRAM 256KBIT PARALLEL 28SOP
  • Series:-
  • Mfr:RAMXEED
  • Package:Tape & Reel (TR)

SKU:b6712ab614e6 Category: Brand:

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MB85R256FPF-G-BND-ERE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 256KBIT PARALLEL 28SOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MB85R256FPF-G-BND-ERE1

  • Description:IC FRAM 256KBIT PARALLEL 28SOP
  • Series:-
  • Mfr:RAMXEED
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FRAM
  • Technology:FRAM (Ferroelectric RAM)
  • Memory Size:256Kbit
  • Memory Organization:32K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:150ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package:28-SOP
  • Access Time:150 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for MB85R256FPF-G-BND-ERE1

MB85R256FPF-G-BND-ERE1

Memory IC Overview

The MB85R256FPF-G-BND-ERE1 is a non-volatile ferroelectric RAM (FeRAM) integrated circuit manufactured by RAMXEED. It provides a storage capacity of 256 kbit, organized as 32k x 8 bits. The device utilizes a parallel interface and is housed in a 28-SOP package with dimensions of 0.295 inches (7.50mm) width. It operates within a supply voltage range of 2.7V to 3.6V and supports an operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Non-volatile data retention capability inherent to ferroelectric memory technology
  • Parallel interface architecture for direct bus connectivity
  • Surface-mount packaging suitable for automated assembly processes

Memory IC Applications

  • Industrial control systems requiring reliable data logging
  • Automotive electronics operating under standard temperature conditions
  • Embedded systems needing fast random access memory replacement

Memory IC Procurement Notes

Verify the specific suffix BND against official datasheets to confirm the 28-SOP package variant. Ensure compatibility with existing parallel bus designs. Confirm moisture sensitivity level requirements for your manufacturing process. Check for any product change notifications regarding recent revisions. Validate that the 2.7V to 3.6V supply range matches your system power rails.

Memory IC Selection Notes

Select this component when a parallel interface is required instead of serial alternatives like SPI or I2C. The 256 kbit density suits applications needing moderate storage without complex addressing schemes. Consider the 28-pin footprint for PCB layout constraints. Verify thermal performance within the specified -40°C to +85°C range for your environment.

Memory IC Part Context

This part belongs to the MB85R256 family of FeRAM devices. It shares core memory technology with other variants but differs in interface type and package. Parallel interfaces offer higher throughput potential compared to serial options but require more pins. The 28-SOP form factor distinguishes it from smaller 8-pin serial counterparts.

Memory IC FAQ

What is the memory organization of the MB85R256FPF-G-BND-ERE1?

The memory is organized as 32k words by 8 bits.

Does this component support serial communication protocols?

No, this specific model uses a parallel interface, not SPI or I2C.

MB85R256FPF-G-BND-ERE1MB85R256FPF-G-BND-ERE1

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