MB85R256FPF-G-BNDE1

Memory IC Overview

The MB85R256FPF-G-BNDE1 is a non-volatile ferroelectric RAM (FeRAM) integrated circuit manufactured by RAMXEED. It provides a storage capacity of 256Kbit, organized as 32K words by 8 bits. The device utilizes an x8 parallel interface and operates within a supply voltage range of 2.7V to 3.6V. It is housed in a TSOP-28 package and supports industrial operating temperatures from -40°C to +85°C.

Memory IC Feature Summary

• Non-volatile data retention without requiring power for storage maintenance
• Parallel interface architecture supporting direct memory access patterns
• Industrial temperature rating suitable for demanding environmental conditions

Memory IC Applications

• Industrial control systems requiring fast data logging
• Embedded applications needing high endurance write cycles
• Data acquisition modules with parallel bus interfaces

Memory IC Procurement Notes

Verify the specific suffix BNDE1 against current manufacturer documentation to confirm availability status and any recent product change notifications. Ensure the TSOP-28 package dimensions match your PCB footprint requirements. Confirm RoHS compliance details if required for your assembly process.

Memory IC Selection Notes

Select this component when a parallel interface is mandatory for system compatibility. Consider the 256Kbit capacity and 32Kx8 organization for addressing schemes. Verify that the 2.7V to 3.6V supply range aligns with your system's power rails and that the TSOP-28 form factor fits the mechanical constraints.

Memory IC Part Context

This part belongs to the MB85R256 family of FeRAM devices from RAMXEED. These components are designed to replace traditional EEPROM or Flash memory where higher write speeds and unlimited endurance are critical. The parallel interface distinguishes it from SPI or I2C variants within the same memory density class.

Memory IC Replacement Considerations

• MB85R256FPNF-G-JNE2