MB85R256FPFCN-G-BNDE1

$5.47

Description：IC FRAM 256KBIT PAR 28TSOP I
Series：-
Mfr：RAMXEED
Package：Tray

SKU:598739fa0efb Category: Memory IC Brand: RAMXEED

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Product introduction

MB85R256FPFCN-G-BNDE1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is IC FRAM 256KBIT PAR 28TSOP I. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MB85R256FPFCN-G-BNDE1

Description：IC FRAM 256KBIT PAR 28TSOP I
Series：-
Mfr：RAMXEED
Package：Tray
Memory Type：Non-Volatile
Memory Format：FRAM
Technology：FRAM (Ferroelectric RAM)
Memory Size：256Kbit
Memory Organization：32K x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：150ns
Voltage - Supply：2.7V ~ 3.6V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package：28-TSOP I
Access Time：150 ns
Grade：-
Qualification：-

Memory IC datasheet and documents for MB85R256FPFCN-G-BNDE1

MB85R256FPFCN-G-BNDE1

Memory IC Overview

The MB85R256FPFCN-G-BNDE1 is a 256 Kbit (32 K x 8) Ferroelectric Random Access Memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes a pseudo-SRAM interface and operates within a supply voltage range of 2.7 V to 3.6 V. The device supports read/write endurance of 10^12 cycles per byte and features data retention exceeding 10 years at +85°C. It is housed in a 28-pin plastic TSOP package with a lead pitch of 0.55 mm, designed for surface-mount applications.

Memory IC Feature Summary

Nonvolatile memory capability without requiring backup batteries
High write endurance suitable for frequent data logging
Pseudo-SRAM interface for simplified integration

Memory IC Applications

Industrial control systems requiring high-speed data logging
Smart metering devices needing reliable nonvolatile storage
Automotive electronics demanding extended temperature operation

Memory IC Procurement Notes

Verify the specific ordering suffix BNDE1 against official documentation to confirm tray packaging and moisture sensitivity level requirements. Ensure design compliance with reflow soldering profiles as data integrity prior to reflow is not guaranteed. Confirm RoHS and REACH regulatory status matches project specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a pseudo-SRAM interface is required alongside high endurance and low power consumption. Compare operating voltage ranges and package dimensions against existing board layouts. Consider thermal management capabilities given the specified ambient temperature operating limits during continuous read and write operations.

Memory IC Part Context

This FeRAM device belongs to the MB85R256F family, representing a transition from Fujitsu Semiconductor Memory Solutions Limited to RAMXEED Limited while maintaining original part numbering conventions. It serves as a direct replacement for legacy SRAM designs where nonvolatility and high cycle life are critical performance factors.