MB85R4M2TFN-G-ASE1

Memory IC Overview

The MB85R4M2TFN-G-ASE1 is a non-volatile FRAM memory IC manufactured by RAMXEED. It features a 4 Mbit storage capacity organized as 256K x 16 bits. The device utilizes a parallel interface with a maximum access time of 150 ns. It operates within a supply voltage range of 1.7V to 3.6V and supports an industrial temperature range of -40°C to +85°C. The component is housed in a 44-TSOP package.

Memory IC Feature Summary

• Non-volatile ferroelectric RAM technology ensuring data retention without power
• Parallel interface architecture for direct bus connectivity
• Industrial temperature rating for reliable operation in harsh environments

Memory IC Applications

• Data logging systems requiring frequent write cycles
• Industrial control applications needing rapid data access
• Embedded systems with limited power supply constraints

Memory IC Procurement Notes

Verify the exact suffix ASE1 against official RAMXEED documentation to confirm package type and temperature grade. Ensure compatibility with parallel bus timing requirements before integration. Confirm RoHS compliance status through current manufacturer declarations.

Memory IC Selection Notes

Select this part when a parallel interface is required for high-speed data throughput. Consider the 150 ns access time for system latency calculations. Evaluate the 44-TSOP footprint against PCB layout constraints compared to alternative packages like FBGA.

Memory IC Part Context

This component belongs to the MB85R series of Ferroelectric RAM devices. It offers a balance between speed and density, targeting applications where traditional Flash or EEPROM technologies are too slow or have limited endurance. The parallel interface distinguishes it from SPI or I2C variants in the same family.

Memory IC Replacement Considerations

MB85R4M2TFN-G-JAE2 is listed as a direct substitute.