MB85R8M1TAFN-G-JAE2

Memory IC Overview

The MB85R8M1TAFN-G-JAE2 is an 8 Mbit (1,048,576 words × 8 bits) Ferroelectric Random Access Memory (FeRAM) chip manufactured by RAMXEED. It utilizes a pseudo-SRAM interface and operates within a supply voltage range of 1.8 V to 3.6 V. The device supports read/write endurance of 10^14 operations per 64 bits and ensures data retention for up to 95 years at +55 °C. It functions in an ambient temperature range of −40 °C to +85 °C and is housed in a 44-pin plastic TSOP package.

Memory IC Feature Summary

• Nonvolatile memory architecture that retains data without backup power
• High endurance capability supporting extensive read/write cycles
• Pseudo-SRAM interface enabling straightforward integration with standard logic
• Low power consumption modes including standby and sleep states

Memory IC Applications

• Industrial control systems requiring frequent data logging
• Automotive information recording applications
• Smart metering devices needing reliable nonvolatile storage
• Embedded systems demanding high-speed random access

Memory IC Procurement Notes

Verify the specific ordering suffix G-JAE2 corresponds to the 44-pin TSOP package variant. Confirm moisture sensitivity level requirements during assembly. Ensure compatibility with the specified voltage range and interface timing parameters before finalizing procurement specifications.

Memory IC Selection Notes

Select this component when high write endurance and battery-less nonvolatility are required. The pseudo-SRAM interface simplifies design compared to serial interfaces. Consider the 44-pin TSOP package constraints for PCB layout. Evaluate thermal management needs given the operating temperature range and power dissipation characteristics.

Memory IC Part Context

This part belongs to the MB85R8M1TA FeRAM family from RAMXEED, formerly Fujitsu Semiconductor. The series offers high-density nonvolatile memory solutions. The TSOP variant provides a surface-mount option suitable for compact electronic designs requiring robust data retention capabilities.

Memory IC Replacement Considerations

Direct substitutes require matching the 8 Mbit capacity, pseudo-SRAM interface, and 44-pin TSOP package. Verify electrical characteristics such as voltage range and timing parameters against existing system requirements.