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MB85RC04PNF-G-AME1 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is 4kbit FRAM. Review the specifications below when checking this part for your BOM.
The MB85RC04PNF-G-AME1 is a 4 Kbit (512 words x 8 bits) Ferroelectric Random Access Memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes a two-wire I2C serial interface and operates within a supply voltage range of 2.7 V to 3.6 V. The device supports standard mode up to 100 kHz and fast mode up to 400 kHz. It features a write endurance of at least 10^12 cycles per byte and data retention exceeding 10 years at +85°C. The component is housed in an 8-pin plastic SOP package with a 150mil width.
Verify that the ordering suffix corresponds to the tray packaging format. Confirm the specific revision level matches the design requirements. Ensure the voltage supply aligns with the 2.7 V to 3.6 V operational range. Check for moisture sensitivity handling instructions prior to assembly.
Select this component when nonvolatile storage with high write endurance is required without battery backup. The I2C interface simplifies connection to microcontrollers. Verify that the operating voltage and temperature range meet system specifications. Consider the 8-pin SOP package constraints for PCB layout.
This part belongs to the MB85RC04 series of FeRAM devices from RAMXEED. The manufacturer continues to support existing products while maintaining original part numbering conventions inherited from Fujitsu Semiconductor Memory Solutions Limited.
Direct substitutes include MB85RC04PNF-G-JNE1, MB85RC04PNF-G-JNERE1, and MB85RC04PNF-G-AMERE2. These variants share identical electrical characteristics but differ in shipping forms such as tubes or embossed carrier tapes.
No, the device performs high-speed write operations and does not require waiting time for acknowledge polling after issuing a stop condition.
Setting the WP pin to a high level disables writing operations. Setting it to a low level enables rewriting of the entire memory region.
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