MB85RC128APNF-G-AME2

$2.52

Description：128kbit FRAM
Series：*
Mfr：RAMXEED
Package：Tube

SKU:0e0e8c290530 Category: Memory IC Brand: RAMXEED

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Product introduction

MB85RC128APNF-G-AME2 is listed in the Memory IC range at ChipApex. The manufacturer field lists RAMXEED. Its product description is 128kbit FRAM. Review the specifications below when checking this part for your BOM.

Memory IC specifications for MB85RC128APNF-G-AME2

Description：128kbit FRAM
Series：*
Mfr：RAMXEED
Package：Tube
Memory Type：-
Memory Format：-
Technology：-
Memory Size：-
Memory Organization：-
Memory Interface：-
Clock Frequency：-
Write Cycle Time - Word, Page：-
Voltage - Supply：-
Operating Temperature：-
Mounting Type：-
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Memory IC datasheet and documents for MB85RC128APNF-G-AME2

MB85RC128APNF-G-AME2

Memory IC Overview

The MB85RC128APNF-G-AME2 is a 128 Kbit (16,384 words x 8 bits) Ferroelectric Random Access Memory (FeRAM) utilizing I2C serial interface technology. It operates within a supply voltage range of 2.7 V to 3.6 V and supports standard, fast, and fast mode plus clock frequencies up to 1 MHz. The device features an 8-pin plastic SOP package with a 150mil footprint. Key electrical characteristics include a typical operating current of 250 µA at 1 MHz and standby current of 5 µA. It offers high endurance of at least 10^12 write cycles per byte and data retention exceeding 10 years at +85°C.

Memory IC Feature Summary

Nonvolatile memory cells retain data without backup batteries, eliminating the need for polling sequences after writing operations.

Memory IC Applications

I2C bus slave devices requiring nonvolatile storage
Systems needing high-speed write operations without programming wait times
Applications demanding high read/write endurance

Memory IC Procurement Notes

Verify the specific ordering suffix corresponds to the required shipping form, as the AME2 suffix indicates tray packaging. Confirm moisture sensitivity level and reflow soldering conditions prior to assembly. Ensure the master controller supports the required I2C clock speeds and address configurations for proper system integration.

Memory IC Selection Notes

Select this component when a nonvolatile memory solution requires high endurance and fast write speeds without polling delays. It is suitable for designs operating between 2.7 V and 3.6 V that utilize I2C interfaces. Consider the 8-pin SOP package constraints and the requirement for external pull-up resistors on the SDA and SCL lines.

Memory IC Part Context

This part belongs to the MB85RC128A series of FeRAM devices manufactured by RAMXEED. The manufacturer continues to offer and support existing products while maintaining original Fujitsu part numbering conventions. The series utilizes ferroelectric process and silicon gate CMOS technologies for forming nonvolatile memory cells.