MB85RC128APNF-G-JNE1

Memory IC Overview

The MB85RC128APNF-G-JNE1 is a 128 Kbit (16 K x 8) Ferroelectric Random Access Memory (FeRAM) integrated circuit manufactured by RAMXEED. It utilizes a two-wire I2C serial interface and operates within a supply voltage range of 2.7 V to 3.6 V. The device supports standard, fast, and fast mode plus clock frequencies up to 1 MHz. It features a write endurance of at least 10^12 cycles per byte and data retention exceeding 10 years at +85°C. The component is housed in an 8-pin plastic SOP package with a 150mil lead pitch.

Memory IC Feature Summary

• Nonvolatile memory architecture eliminates the need for backup batteries while retaining data without power.
• High-speed write operations occur simultaneously with read operations, removing the requirement for acknowledge polling sequences typical of Flash or EEPROM technologies.
• Hardware-based write protection allows entire memory array locking via the WP pin, ensuring data integrity against unintended modifications.
• Robust endurance characteristics provide significantly higher cycle life compared to conventional Flash memory solutions.

Memory IC Applications

• Data logging systems requiring frequent write cycles and high reliability
• Industrial control units needing nonvolatile storage for configuration parameters
• Smart metering devices storing usage history and calibration data
• Embedded systems utilizing I2C bus communication for compact memory expansion

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the shipping format, as the base part number corresponds to tube packaging while suffixes like JNERE1 indicate embossed carrier tape. Confirm moisture sensitivity level requirements and reflow soldering profiles prior to assembly. Ensure the design accommodates the required pull-up resistors for the open-drain I2C interface signals.

Memory IC Selection Notes

Select this component when a design demands high write endurance and low power consumption within a small footprint. It is suitable for applications where battery-free nonvolatile storage is critical. Compare against EEPROM alternatives if polling wait times are unacceptable. Ensure the system voltage aligns with the 2.7 V to 3.6 V operating range and that the I2C bus speed does not exceed 1 MHz.

Memory IC Part Context

This component belongs to the MB85RC128A series of FeRAM devices from RAMXEED, formerly Fujitsu Semiconductor Memory Solutions Limited. The series offers various packaging options including tubes, reels, and trays. The technology leverages ferroelectric process and silicon gate CMOS processes to create nonvolatile memory cells with superior durability compared to traditional flash memory types.

Memory IC Replacement Considerations

MB85RC128APNF-G-JNERE1

Memory IC FAQ

Does the MB85RC128A require an acknowledge polling sequence after writing data?

No, the device performs write operations at the same speed as read operations, so no waiting time for ACK polling occurs after issuing the stop condition.

What is the default state of the Write Protect (WP) pin if left unconnected?

The WP pin is internally pulled down to VSS, which is recognized as the 'L' level, meaning the device is in the write-enabled state by default.

How many devices can be connected to the same I2C bus using this component?

Up to eight devices can be connected to the same data bus, distinguished by unique combinations of the external hardware address pins A0, A1, and A2.